In situ photoemission study of epitaxial thin films

2007 ◽  
Vol 310 (2) ◽  
pp. 963-965 ◽  
Author(s):  
H. Wadati ◽  
A. Maniwa ◽  
I. Ohkubo ◽  
H. Kumigashira ◽  
A. Fujimori ◽  
...  
2005 ◽  
Vol 144-147 ◽  
pp. 877-880 ◽  
Author(s):  
H. Wadati ◽  
D. Kobayashi ◽  
A. Chikamatsu ◽  
R. Hashimoto ◽  
M. Takizawa ◽  
...  

2004 ◽  
Vol 272-276 ◽  
pp. 436-437 ◽  
Author(s):  
K Horiba ◽  
H Ohguchi ◽  
D Kobayashi ◽  
H Kumigashira ◽  
M Oshima ◽  
...  

2004 ◽  
Vol 412-414 ◽  
pp. 134-138 ◽  
Author(s):  
H. Yamamoto ◽  
M. Naito ◽  
A. Tsukada ◽  
S. Suzuki

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.


1996 ◽  
pp. 1009-1012
Author(s):  
Shin-ichi Karimoto ◽  
Keiichi Tanabe ◽  
Shugo Kubo ◽  
Koji Tsuru ◽  
Minoru Suzuki

2005 ◽  
Vol 144-147 ◽  
pp. 511-514 ◽  
Author(s):  
A. Chikamatsu ◽  
H. Wadati ◽  
M. Takizawa ◽  
R. Hashimoto ◽  
H. Kumigashira ◽  
...  

2007 ◽  
Vol 316 (2) ◽  
pp. e158-e161 ◽  
Author(s):  
F. Albertini ◽  
L. Nasi ◽  
F. Casoli ◽  
S. Fabbrici ◽  
P. Luches ◽  
...  

2007 ◽  
Vol 310 (2) ◽  
pp. 1030-1032
Author(s):  
A. Chikamatsu ◽  
H. Wadati ◽  
H. Kumigashira ◽  
M. Oshima ◽  
A. Fujimori ◽  
...  

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