Surface Morphology of in situ Superconducting Bi2Sr2CaCU2O8 Epitaxial Thin Films Grown on Various Substrates

1996 ◽  
pp. 1009-1012
Author(s):  
Shin-ichi Karimoto ◽  
Keiichi Tanabe ◽  
Shugo Kubo ◽  
Koji Tsuru ◽  
Minoru Suzuki
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Epitaxial Thin Films

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3695-3697 ◽  
Author(s):  
J. Gao ◽  
L. Kang ◽  
H. Y. Wong ◽  
Y. L. Cheung ◽  
J. Yang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Large Range ◽  
Superconducting Films ◽  
Buffer Layers ◽  
Epitaxial Thin Films ◽  
Average Surface Roughness ◽  
X Ray ◽  
Flat Interface ◽  
The Eu

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu 2 CuO 4/ YSZ (yttrium-stabilized ZrO 2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu 2 CuO 4/ YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa2Cu3O7−x thin films

1993 ◽  
Vol 22 (8) ◽  
pp. 1113-1120 ◽  
Author(s):  
A. C. Westerheim ◽  
P. C. Mcintyre ◽  
S. N. Basu ◽  
D. Bhatt ◽  
L. S. Yu-Jahnes ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Ex Situ

Grain size reduction and magnetic properties improvement by in situ annealing of FePt epitaxial thin films

2007 ◽  
Vol 316 (2) ◽  
pp. e158-e161 ◽  
Author(s):  
F. Albertini ◽  
L. Nasi ◽  
F. Casoli ◽  
S. Fabbrici ◽  
P. Luches ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetic Properties ◽  
Size Reduction ◽  
Epitaxial Thin Films

In situ photoemission study of epitaxial thin films

2007 ◽  
Vol 310 (2) ◽  
pp. 963-965 ◽  
Author(s):  
H. Wadati ◽  
A. Maniwa ◽  
I. Ohkubo ◽  
H. Kumigashira ◽  
A. Fujimori ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Photoemission Study

Electronic Properties of OMVPE Grown films of YBa2Cu3O7-δ on 1” LaAlO3 Substrates

1992 ◽  
Vol 271 ◽  
Author(s):  
William S. Rees ◽  
Yusuf S. Hascicek ◽  
Louis R. Testardi
Keyword(s):  
Thin Films ◽  
Nitrous Oxide ◽  
Surface Morphology ◽  
Electronic Properties ◽  
Rotating Disk ◽  
Cold Wall ◽  
Rotating Disk Reactor ◽  
Substrate Temperatures ◽  
Source Materials

ABSTRACTFilms of YBa2CU3O7-δ have been grown on 1” LaAlO3 by OMVPE utilizing M(tmhd)n (M = Ba, Cu: n = 2; M = Y: n = 3; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionato) as the source materials in a cold wall, vertical rotating disk reactor. The resultant films were characterized by SEM, XRD, Tc, Jc, and surface profilometry measurements. Relative to laser ablated thin films, the surface morphology was determined to be virtually featureless. In-situ depositions at substrate temperatures of <700°C, employing nitrous oxide as the oxidizing reagent, produced annular irregularities in the electronic properties of these films. The highest quality was observed near the film's center, with a marked decay evident toward the exterior 7 mm perimeter of the coated wafer.

Sign in / Sign up

Export Citation Format

Share Document