Physical properties of ZnSe thin films deposited on glass and silicon substrates

2014 ◽  
Vol 75 (6) ◽  
pp. 713-725 ◽  
Author(s):  
A.P. Pardo Gonzalez ◽  
H.G. Castro-Lora ◽  
L.D. López-Carreño ◽  
H.M. Martínez ◽  
N.J. Torres Salcedo
2006 ◽  
Vol 99 (12) ◽  
pp. 123502 ◽  
Author(s):  
M. Cahay ◽  
K. Garre ◽  
X. Wu ◽  
D. Poitras ◽  
D. J. Lockwood ◽  
...  

2020 ◽  
Vol 117 ◽  
pp. 113845 ◽  
Author(s):  
S. Chuhadiya ◽  
R. Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  

2013 ◽  
Vol 586 (1) ◽  
pp. 129-137 ◽  
Author(s):  
Maeng Jun Kim ◽  
Sung Ho Lee ◽  
Hong Tak Kim ◽  
Sang Ho Sohn

2020 ◽  
Vol 132 ◽  
pp. 110982 ◽  
Author(s):  
Deepak Suthar ◽  
G. Chasta ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
...  

2019 ◽  
Vol 478 ◽  
pp. 831-839 ◽  
Author(s):  
O. Toma ◽  
L. Ion ◽  
S. Iftimie ◽  
V.A. Antohe ◽  
A. Radu ◽  
...  

2020 ◽  
Vol 384 (4) ◽  
pp. 126097 ◽  
Author(s):  
Ritika Sharma ◽  
Himanshu ◽  
S.L. Patel ◽  
S. Chander ◽  
M.D. Kannan ◽  
...  

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


2013 ◽  
Vol 9 (4) ◽  
pp. 532-535
Author(s):  
N. Ali ◽  
W. A. A. Syed ◽  
I. Murtaza ◽  
S. T. Hussain ◽  
N. Ahmad ◽  
...  

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