Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive constant voltage stress

2005 ◽  
Vol 80 ◽  
pp. 170-173 ◽  
Author(s):  
L.J. Tang ◽  
K.L. Pey ◽  
C.H. Tung ◽  
R. Ranjan ◽  
W.H. Lin
Keyword(s):  
Gate Dielectrics ◽  
Constant Voltage ◽  
Voltage Stress

Nitrided Gate Dielectrics and Charge-to-Breakdown Test

1996 ◽  
Vol 429 ◽  
Author(s):  
S. Dimitrijev ◽  
P. Tanner ◽  
H. B. Harrison ◽  
D. Sweatman
Keyword(s):  
Stress Field ◽  
Silicon Dioxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Time Dependent ◽  
Dielectric Films ◽  
Charge Accumulation ◽  
Constant Voltage ◽  
Voltage Stress

AbstractIn this paper, the applicability of the charge-to-breakdown test for characterisation and comparison of differently grown ultra-thin gate dielectric films is considered. It is shown that the charge-to-breakdown parameter cannot be reliably used, because it is related to the electrons tunneling through the film, and not to the mechanism of positive charge accumulation which leads to time-dependent breakdown. It is found that the constant-voltage stress provides a consistent set of stress field vs time-to-breakdown data. Nitrided gate dielectrics show improved breakdown characteristics, compared to standard silicon-dioxide films.

SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

2010 ◽  
Vol 54 (9) ◽  
pp. 979-984 ◽  
Author(s):  
M.S. Rahman ◽  
E.K. Evangelou ◽  
I.I. Androulidakis ◽  
A. Dimoulas ◽  
G. Mavrou ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Constant Voltage ◽  
Voltage Stress
Sign in / Sign up

Export Citation Format

Share Document