SILC decay in Ge-based MOS devices with La2O3 gate dielectrics subjected to constant voltage stress
2004 ◽
Vol 44
(2)
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pp. 207-212
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2003 ◽
Vol 47
(1)
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pp. 71-76
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2010 ◽
Vol 54
(9)
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pp. 979-984
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2016 ◽
Vol 63
(6)
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pp. 2268-2274
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