Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

2008 ◽  
Vol 85 (1) ◽  
pp. 2-8 ◽  
Author(s):  
Huang-Chun Wen ◽  
Prashant Majhi ◽  
Kisik Choi ◽  
C.S. Park ◽  
Husam N. Alshareef ◽  
...  
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Metal Electrodes ◽  
Effective Work ◽  
Effective Work Function ◽  
Fermi Level Pinning ◽  
Pinning Effect ◽  
P Type

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

scholarly journals Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study

2018 ◽  
Vol 20 (18) ◽  
pp. 12939-12947 ◽  
Author(s):  
Andrey A. Kistanov ◽  
Yongqing Cai ◽  
Kun Zhou ◽  
Sergey V. Dmitriev ◽  
Yong-Wei Zhang
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Electronic Properties ◽  
Surface Functionalization ◽  
First Principles ◽  
Molecular Adsorption ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
First Principles Study ◽  
P Type

A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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