Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (001) using scanning tunneling microscopy

2011 ◽  
Vol 88 (7) ◽  
pp. 1058-1060 ◽  
Author(s):  
Y.P. Chiu ◽  
M.C. Shih ◽  
B.C. Huang ◽  
J.Y. Shen ◽  
M.L. Huang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Direct Measurement ◽  
Interfacial Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

SCANNING TUNNELING MICROSCOPY DETERMINATION OF SURFACE DIFFUSION BY DIRECT MEASUREMENT OF DISPLACEMENT DISTRIBUTION

1994 ◽  
Vol 08 (03) ◽  
pp. 137-142
Author(s):  
Y.W. MO
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Direct Measurement ◽  
Anisotropic Diffusion ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Displacement Distribution ◽  
Microscopy Method

A scanning tunneling microscopy method for studying surface diffusion is developed based on measurements of the displacement distribution of adsorbates by “image-anneal-image” cycles which allow direct observation of diffusion process while avoiding potential STM-tip effects. The method is used to study the anisotropic diffusion of Sb dimers on Si(001).

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