Direct measurement of reaction kinetics for the decomposition of ultrathin oxide on Si(001) using scanning tunneling microscopy

1992 ◽  
Vol 69 (2) ◽  
pp. 339-342 ◽  
Author(s):  
K. E. Johnson ◽  
T. Engel
1994 ◽  
Vol 08 (03) ◽  
pp. 137-142
Author(s):  
Y.W. MO

A scanning tunneling microscopy method for studying surface diffusion is developed based on measurements of the displacement distribution of adsorbates by “image-anneal-image” cycles which allow direct observation of diffusion process while avoiding potential STM-tip effects. The method is used to study the anisotropic diffusion of Sb dimers on Si(001).


2011 ◽  
Vol 88 (7) ◽  
pp. 1058-1060 ◽  
Author(s):  
Y.P. Chiu ◽  
M.C. Shih ◽  
B.C. Huang ◽  
J.Y. Shen ◽  
M.L. Huang ◽  
...  

Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.


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