Modeling charge variation during data retention of MLC Flash memories

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1060-1063 ◽  
Author(s):  
J. Postel-Pellerin ◽  
F. Lalande ◽  
P. Canet ◽  
R. Bouchakour ◽  
F. Jeuland ◽  
...  
Keyword(s):  
Data Retention ◽  
Flash Memories ◽  
Charge Variation

Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
Yu-Heng Liu ◽  
Yu-Siang Yang ◽  
Chih-Yuan Tseng ◽  
Wei Lin ◽  
An-Chang Liu ◽  
...  
Keyword(s):  
Nand Flash ◽  
Data Retention ◽  
Flash Memories ◽  
Single Level ◽  
Mode Operation

Gate stress effect on low temperature data retention characteristics of split-gate flash memories

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1331-1336 ◽  
Author(s):  
Ling-Chang Hu ◽  
An-Chi Kang ◽  
Eric Chen ◽  
J.R. Shih ◽  
Yao-Feng Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Data ◽  
Stress Effect ◽  
Data Retention ◽  
Flash Memories ◽  
Retention Characteristics

scholarly journals Reliability Model For Data Retention In FLASH Memories

2020 ◽  
Author(s):  
Zaci Cohen
Keyword(s):  
Reliability Model ◽  
Cell Type ◽  
Data Retention ◽  
Flash Memories ◽  
Tunnel Width

New <b>reliability </b>model for prediction of <b>data retention</b> in Flash memories, that taking into account cell type, workin temerature, endurance, tunnel width all togther.<br>The model is accurate, simple and easy to use.

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