Self-terminating barium ion laser at 614.2 nm

2021 ◽  
pp. 107625
Author(s):  
M.A. Lavrukhin ◽  
P.A. Bokhan ◽  
P.P. Gugin ◽  
D.E. Zakrevsky
Keyword(s):  
Author(s):  
P.M. Houpt ◽  
A. Draaijer

In confocal microscopy, the object is scanned by the coinciding focal points (confocal) of a point light source and a point detector both focused on a certain plane in the object. Only light coming from the focal point is detected and, even more important, out-of-focus light is rejected.This makes it possible to slice up optically the ‘volume of interest’ in the object by moving it axially while scanning the focused point light source (X-Y) laterally. The successive confocal sections can be stored in a computer and used to reconstruct the object in a 3D image display.The instrument described is able to scan the object laterally with an Ar ion laser (488 nm) at video rates. The image of one confocal section of an object can be displayed within 40 milliseconds (1000 х 1000 pixels). The time to record the total information within the ‘volume of interest’ normally depends on the number of slices needed to cover it, but rarely exceeds a few seconds.


1993 ◽  
Vol 21 (1) ◽  
pp. 35-37
Author(s):  
TADASHI TAKAHASHI
Keyword(s):  
Rare Gas ◽  

ACS Sensors ◽  
2021 ◽  
Author(s):  
Pawan Thapa ◽  
Nicholas K. Byrnes ◽  
Alena A. Denisenko ◽  
James X. Mao ◽  
Austin D. McDonald ◽  
...  

2017 ◽  
Vol 26 (02) ◽  
pp. 1750025 ◽  
Author(s):  
M. K. Biswas ◽  
P. K. Das ◽  
E. Hoque ◽  
S. M. Sharafuddin ◽  
S. K. Das ◽  
...  

The present work studies the optical nonlinearity exhibited by the material (for Continuous Wave (CW) laser or long pulse) due to the change in thermal properties of the material on illumination. Thermal lens (TL) technique has been used to measure the refractive index change due to the formation of TL along with other thermo-optic properties of the material in solution. A CW Ar-ion laser has been used as light source and the laser beam was chopped at 25[Formula: see text]Hz frequency to obtain 12[Formula: see text]ms pulse to observe the formation of the TL within the sample. The [Formula: see text] value have been calculated by the TL technique for Benzene, Toluene and Dimethylaniline (DMA) in toluene and Benzene. The [Formula: see text] value is found to be in the order of 10[Formula: see text] to 10[Formula: see text][Formula: see text]cm2[Formula: see text]W[Formula: see text].


1976 ◽  
Vol 25 (1) ◽  
pp. 833-835
Author(s):  
G. N. Alferov ◽  
V. I. Donin ◽  
B. Ya. Yurshin

Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.


1998 ◽  
Vol 07 (01) ◽  
pp. 61-71
Author(s):  
C. L. Tang ◽  
K. C. Burr ◽  
F. Sh. Ganikhanov

The recent development of periodically poled lithium niobate (PPLN) has led to a variety of highly efficient and compact all-solid-state nonlinear optical devices. Of particular interest are the optical parametric oscillators. We have most recently demonstrated for the first time a highly efficient broadly tunable femtosecond optical parametric oscillator (fs OPO) using PPLN. The threshold for oscillation of the PPLN fs OPO is remarkably low, on the order of 50 mW. As a result, it is now possible to use a diode-pumped and frequency-doubled Nd:YVO 4 laser, rather than an Ar-ion laser, as the pump source for the mode-locked Ti:sapphire laser for pumping the fs OPO. Such an OPO can operate from approximately 1 μm to 5.4 μm. Femtosecond sources have been used in a variety of experiments to study the dynamics of hot carriers in semiconductors. Because of the limited available wavelength range of earlier femtosecond sources, most such studies have been limited to electron dynamics in the conduction band of III–V compounds such as GaAs. With the extended tuning range of the recently developed fs OPO's, it is now possible to study a much wider variety of materials and transitions. We have recently obtained preliminary results on the ultrafast dynamics of holes in GaAs using two-wavelength tunable femtosecond spectroscopy, by pumping the valence-to-conduction band transition at approximately 800 nm and simultaneously probing the transitions between the split-off band and the perturbed heavy-hole band at approximately 3 μm. These recent results are summarized and discussed briefly.


Sign in / Sign up

Export Citation Format

Share Document