Point Defect Study in Fe75Al25 and Fe70Al25X5 X=(Cr, Ni) Alloys as a Function of Thermal Treatment by Positron Lifetime Spectroscopy

ABSTRACTVacancy-like defects in CoAl in the composition range 48.5 at.-% <Cco, < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. The values of the positron lifetime and the S-parameter decrease with increasing Co concentration. After quenching from 1400°C or 1600°C an increase in the positron parameters isobserved. Long-time annealing of the Co-rich sample shows a dramatic decrease of the positron lifetime to the expected bulk lifetime.

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Nanometer size pores in ionic liquid loaded silica gel characterized by positron lifetime spectroscopy

physica status solidi (a) ◽

10.1002/pssa.201532487 ◽

2015 ◽

Vol 213 (1) ◽

pp. 165-169 ◽

Cited By ~ 2

Author(s):

Christian Herold ◽

Hubert Ceeh ◽

Thomas Gigl ◽

Markus Reiner ◽

Marco Haumann ◽

...

Keyword(s):

Ionic Liquid ◽

Silica Gel ◽

Positron Lifetime ◽

Nanometer Size ◽

Positron Lifetime Spectroscopy

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Defects in electron irradiated GaP studied by positron lifetime spectroscopy

Applied Physics A ◽

10.1007/bf01538526 ◽

1995 ◽

Vol 60 (6) ◽

pp. 541-544 ◽

Cited By ~ 5

Author(s):

A. Polity ◽

Th. Abgarjan ◽

R. Krause-Rehberg

Keyword(s):

Positron Lifetime ◽

Positron Lifetime Spectroscopy

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Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.607.134 ◽

2008 ◽

Vol 607 ◽

pp. 134-136

Author(s):

Y.J. Zhang ◽

Ai Hong Deng ◽

You Wen Zhao ◽

J. Yu ◽

X.X. Yu ◽

...

Keyword(s):

Electron Irradiation ◽

Positron Lifetime ◽

Deep Level ◽

High Concentration ◽

Positron Annihilation Lifetime ◽

Donor Type ◽

Positron Lifetime Spectroscopy ◽

Transient Spectroscopy ◽

Induced Defects ◽

Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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