High-Tc dc SQUID readout electronics with low noise and high bandwidth

2006 ◽  
Vol 445-448 ◽  
pp. 982-985 ◽  
Author(s):  
D.F. He ◽  
H. Itozaki
Keyword(s):  
Low Noise ◽  
High Tc ◽  
Readout Electronics ◽  
High Bandwidth ◽  
Squid Readout

Low-noise ultra-high-speed dc SQUID readout electronics

2006 ◽  
Vol 19 (5) ◽  
pp. S235-S241 ◽  
Author(s):  
Dietmar Drung ◽  
Colmar Hinnrichs ◽  
Henry-Jobes Barthelmess
Keyword(s):  
High Speed ◽  
Low Noise ◽  
Readout Electronics ◽  
Ultra High Speed ◽  
Squid Readout

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

2019 ◽  
Vol 11 (7) ◽  
pp. 635-644 ◽  
Author(s):  
T. Shivan ◽  
E. Kaule ◽  
M. Hossain ◽  
R. Doerner ◽  
T. Johansen ◽  
...  
Keyword(s):  
Noise Figure ◽  
Impedance Matching ◽  
Low Noise ◽  
Ultra Wideband ◽  
Frequency Range ◽  
Collector Current ◽  
Noise Sources ◽  
Distributed Amplifier ◽  
Double Heterojunction ◽  
High Bandwidth

AbstractThis paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

Low-noise low-power readout electronics circuit development in standard CMOS technology for 4 K applications

2006 ◽  
Author(s):  
Patrick Merken ◽  
Tim Souverijns ◽  
Jan Putzeys ◽  
Ybe Creten ◽  
Chris Van Hoof
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Low Noise ◽  
Readout Electronics ◽  
Circuit Development

LOW-NOISE AND HIGH-BANDWIDTH 0.8 μm CMOS TRANSIMPEDANCE AMPLIFIER FOR OPTICAL RECEIVER CIRCUIT

2005 ◽  
Vol 14 (02) ◽  
pp. 267-279 ◽  
Author(s):  
M. B. GUERMAZ ◽  
L. BOUZERARA ◽  
H. ESCID ◽  
M. T. BELAROUSSI
Keyword(s):  
Dynamic Range ◽  
Supply Voltage ◽  
High Sensitivity ◽  
Low Noise ◽  
Transimpedance Amplifier ◽  
Power Supply Voltage ◽  
Stability Performance ◽  
High Bandwidth ◽  
The Stability ◽  
Transmission Speed

This paper describes and analyzes a low-noise and high-bandwidth transimpedance amplifier featuring a large dynamic range. The designed amplifier is configured on three identical stages that use an active load compensated by an active resistor to improve the stability performance of the amplifier. This topology displays a transimpedance gain of 150 kΩ, which is necessary to obtain a high sensitivity. This structure operates at 5 V power supply voltage, exhibits a gain bandwidth product of 18 THzΩ and a low-noise level of about [Formula: see text]. This transimpedance amplifier can reach a transmission speed of 240 Mb/s for a photocurrent of 0.5 μA. For a photocurrent of 9.5 μA, a transmission speed of 622 Mb/s can be achieved by using an optical fiber connection containing four channels. The predicted performance is verified by simulations using PSPICE and MAGIC tools with 0.8 μm CMOS AMS parameters.

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