A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications

This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process. Multiple bandwidth enhancement techniques, including input bonding wire, input series on-chip inductive peaking and negative capacitance compensation, are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device, achieving an overall bandwidth enhancement ratio of 8.5. The electrical measurement shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector. The optical measurement demonstrates a clear open eye of 20 Gb/s. The TIA dissipates 4 mW from a 1.2-V supply voltage.

A Segmented Cell Measuring Technique for Current Distribution Measurements in Batteries, Exemplified by the Operando Investigation of a Zn-Air Battery

A transimpedance amplifier circuit as well as an instrumental amplifier circuit were used to measure current densities of a zinc-air battery with an integrated segmented current collector foil. Error calculation showed that the transimpedance amplifier is superior to the used instrumental amplifier, but both methods provide valuable and consistent results. They both showed comparable results with operando insight into the current distribution of the battery. The knowledge about those distributions is essential to avoid fast degradation of battery materials and irreversible capacity loss due to heterogeneous dissolution of the anode during discharge. In this work we showed that oxygen starvation as well as gas flow rate leads to large current gradients. It was also demonstrated that heterogeneous current distributions on cathode side induces also a heterogenous dissolution behavior on the anode, resulting in irreversible capacity loss.

A 4 GHz Single-to-Differential Cross-Coupled Variable-Gain Transimpedance Amplifier for Optical Communication

This letter presents an inductorless transimpedance amplifier (TIA) for visible light communication, using the UMC 40 nm CMOS process. It consists of a single-to-differential input stage with a modified cross-coupled regulated cascode design, followed by a modified fT-doubler mid-stage with a combined active inductor and capacitive degeneration design for bandwidth-enhancement and differential output. The mid-stage also has an attached common-mode feedback (CMFB) circuit. Both the input and mid-stages have gain-varying and peaking-varying functions. It has a measured gain range of 37.5–58.7 dBΩ and 4.15 GHz bandwidth using a 0.5 pF capacitive load. The gain range results in an input dynamic range of 33.2 µA–1.46 mA. Its input referred noise current is 10.7 pA/Hz, core DC power consumption is 7.84 mW from a VDDTIA of 1.6 V and core area is 39 µm × 26 µm.

In-Pixel CTIA & Readout Circuitry for an Active CMOS Image Sensor

This work aims to design and simulate an in-pixel Capacitive Transimpedance Amplifier (CTIA) and peripheral circuitry that ensures pixel reading. Each pixel circuit is composed of four transistors using 90nm CMOS technology with a supply voltage of 1.8 V and is part of an array of pixels that make up a CMOS image sensor with peripheral circuitry. Pixel output is sent to a delta difference sampling (DDS) circuit to filter reset voltages. The Gain Margin achieved for the in-pixel CTIA is 44dB and 91dB for the Phase Margin. We also present measured pixel parameters and give a comparison with prior work. The timing and readout circuitry is also described.

A high-bandwidth low current transimpedance amplification circuit

A measuring circuit is designed based on the transimpedance amplifier. The methods of reducing parasitic capacitance and improving amplifier performance are introduced in detail. The influence of the parasitic capacitance generated by the feedback resistors on the bandwidth in the transimpedance amplification circuit is discussed. The circuit can measure the wide-dynamic-range low current ranging from 10-13 A to 10-5 A in four ranges. The circuit's bandwidth is up to 500 Hz when the circuit can normally work to measure a wide-range low current. The peak-to-peak amplitude of circuit noise is less than 0.22 pA. The current drift is less than 1.06 fA/∘C over a temperature range of 0∘C to 85∘C, and the integral nonlinearity is less than 0.25%.