Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

2004 ◽  
Vol 469-470 ◽  
pp. 322-326 ◽  
Author(s):  
Suk Min Kim ◽  
Min Jung Shin ◽  
Doo Jin Choi ◽  
K.N. Lee ◽  
S.K. Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Phase Change ◽  
Crystal Structures ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application

2012 ◽  
Vol 71 ◽  
pp. 98-100 ◽  
Author(s):  
Limin Cheng, ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Cheng Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Thermal And Electrical Properties ◽  
Change Memory

The Suppressing of Density Change in Nitrogen Doped Ge2Sb2Te5 for High Performance Phase Change Memory

2015 ◽  
Vol 4 (12) ◽  
pp. P105-P108 ◽  
Author(s):  
Z. Xu ◽  
B. Liu ◽  
Y. Chen ◽  
D. Gao ◽  
H. Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Density Change ◽  
Nitrogen Doped ◽  
Change Memory

Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application

2013 ◽  
Vol 79 ◽  
pp. 138-141 ◽  
Author(s):  
Dongning Yao ◽  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Limin Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Ge2Sb2Te5/Sb superlattice-like thin film for high speed phase change memory application

2015 ◽  
Vol 107 (26) ◽  
pp. 263105 ◽  
Author(s):  
Yifeng Hu ◽  
Hua Zou ◽  
Jianhao Zhang ◽  
Jianzhong Xue ◽  
Yongxing Sui ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Memory

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors

2017 ◽  
Vol 51 (2) ◽  
pp. 146-152 ◽  
Author(s):  
A. A. Sherchenkov ◽  
S. A. Kozyukhin ◽  
P. I. Lazarenko ◽  
A. V. Babich ◽  
N. A. Bogoslovskiy ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Transport Mechanisms ◽  
Chalcogenide Semiconductors ◽  
Change Memory

Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory

2013 ◽  
Vol 113 (3) ◽  
pp. 034310 ◽  
Author(s):  
Cheng Peng ◽  
Pingxiong Yang ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Active Region ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Study on nitrogen doped Ge2Sb2Te5 films for phase change memory

2005 ◽  
Vol 40 (6) ◽  
pp. 1543-1545 ◽  
Author(s):  
Min-Jung Shin ◽  
Suk-Min Kim ◽  
Doo-Jin Choi ◽  
Kye-Nam Lee ◽  
Suk Kyoung Hong ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Study on the nitrogen-doped W-Sb-Te material for phase change memory application

2014 ◽  
Vol 104 (17) ◽  
pp. 173102 ◽  
Author(s):  
Kun Ren ◽  
Mengjiao Xia ◽  
Feng Rao ◽  
Zhitang Song ◽  
Keyuan Ding ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Te Material ◽  
Change Memory

Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

2008 ◽  
Vol 1072 ◽  
Author(s):  
Semyon D. Savransky ◽  
Ilya V Karpov
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Activation Energies ◽  
New Technique ◽  
Specific Contact Resistance ◽  
Bulk Conductivity ◽  
Specific Contact ◽  
Change Memory

ABSTRACTNew technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.

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