Light emission characteristics and negative resistance phenomenon of Si-based metal/insulator/semiconductor tunnel junction

2000 ◽  
Vol 161 (1-2) ◽  
pp. 9-13 ◽  
Author(s):  
MaoXiang Wang ◽  
JianHua Yu ◽  
ChengXiu Sun
Keyword(s):  
Tunnel Junction ◽  
Light Emission ◽  
Negative Resistance ◽  
Emission Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction

MRS Advances ◽  
2016 ◽  
Vol 1 (23) ◽  
pp. 1709-1713
Author(s):  
Hasan Goktas ◽  
Volker J. Sorger
Keyword(s):  
Tunnel Junction ◽  
Focused Ion Beam ◽  
Light Emission ◽  
Electron Tunneling ◽  
Ion Beam ◽  
Inelastic Electron ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Grating Structure ◽  
Inelastic Electron Tunneling

ABSTRACTHere we fabricated and characterized a CMOS compatible metal-insulator-semiconductor (MIS) plasmonic tunnel junction for Si-based photonic circuitry. A grating structure was realized on MIS plasmonic tunnel junction via focused-ion-beam milling (FIB) to increase the intensity of the light emission that occurs during inelastic electron tunneling. Approximately 65 times higher intensity of light emission is achieved with the grating structure during the measurements.

Light Emission Characteristics and Surface Roughnessof Au/AlOx/Al Tunnel Junction

1991 ◽  
Vol 60 (12) ◽  
pp. 4366-4373 ◽  
Author(s):  
Yuji Hirao ◽  
Yoshiki Naoi ◽  
Yoshinobu Nagano ◽  
Masuo Fukui
Keyword(s):  
Tunnel Junction ◽  
Light Emission ◽  
Emission Characteristics
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