In-Situ Transmission Elecron Microscopy (TEM) Study of the Sintering of Sputtered Copper Nanoparticles on (001) Copper

1997 ◽  
Vol 3 (S2) ◽  
pp. 401-402
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.W. Bullard ◽  
D.L. Olynick ◽  
...  
Keyword(s):  
Gas Phase ◽  
Copper Nanoparticles ◽  
Room Temperature ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Single Particles ◽  
Fine Grain ◽  
Structural And Electrical Properties ◽  
Nanophase Materials

The large surface area: volume ratios and fine grain size of nanophase materials give rise to novel and exciting structural and electrical properties that are of considerable scientific and technological interest. Using copper as a model system we have investigated the sintering of sputtered copper nanoparticles (4-20nm diameter) with a copper substrate in a novel UHV in-situ TEM.The nanoparticles were generated in a UHV chamber built into the side of the column by sputtering in 1.5Torr Ar. They were transported into the microscope in the gas phase and deposited on an electron transparent (001) copper foil mounted on a heated support. A typical bright-field (BF) image of the sample immediately after deposition at room temperature is shown in Fig. 1. The particles have assumed a random orientation on the substrate and remain stable for many hours at room temperature. The presence of both single particles and agglomerates of particles is evident in this image and examples are labelled ‘P’ and ‘A’, respectively

In situ chemical probing of hole defects and cracks in graphene at room temperature

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11052-11063 ◽  
Author(s):  
Ali I. Altan ◽  
Jian Chen
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Copper Substrate ◽  
Phase Reaction ◽  
Vacancy Defects ◽  
Gas Phase Reaction ◽  
Chemical Probing ◽  
Hole Defects ◽  
Grown Graphene

The vacancy defects in CVD-grown graphene can be visualized under SEM after the solid–gas phase reaction between H2S gas and exposed copper substrate in the air at room temperature.

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

In-situ TEM study of the sintering of copper nanoparticles on (001) copper

2022 ◽  
pp. 257-260
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.W. Bullard ◽  
J.M. Gibson
Keyword(s):  
Copper Nanoparticles ◽  
In Situ Tem

The role of platinum on the NOx storage and desorption behavior of ceria: An online FT-IR study combined with in situ Raman and UV-Vis spectroscopy

2020 ◽  
Author(s):  
Anastasia Filtschew ◽  
Pablo Beato ◽  
Søren Birk Rasmussen ◽  
Christian Hess
Keyword(s):  
Gas Phase ◽  
Phase Analysis ◽  
Room Temperature ◽  
Storage Mechanism ◽  
In Situ Raman ◽  
Vis Spectroscopy ◽  
Ft Ir ◽  
Ir Study

The role of platinum on the room temperature NOx storage mechanism and the NOx desorption behavior of ceria was investigated by combining online FT-IR gas-phase analysis with in situ Raman...

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
In Situ Tem ◽  
Accelerator Facility ◽  
Transmission Electron ◽  
Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

scholarly journals In-situ TEM-STM Observations of SWCNT Ropes/tubular Transformations

2009 ◽  
Vol 1204 ◽  
Author(s):  
Franscisco Solá ◽  
Marisabel Lebrón-Colón ◽  
F. Ferreira ◽  
Luis F. Fonseca ◽  
Michael A. Meador ◽  
...  
Keyword(s):  
Gas Phase ◽  
Morphological Changes ◽  
Single Walled Carbon Nanotubes ◽  
In Situ Tem ◽  
Purification Technique ◽  
Buckling Behavior ◽  
Multi Walled Carbon Nanotube ◽  
Walled Carbon Nanotubes ◽  
Tubular Formation

AbstractSingle-walled carbon nanotubes (SWCNTs) prepared by the HiPco process were purified using a modified gas phase purification technique. A TEM-STM holder was used to study the morphological changes of SWCNT ropes as a function of applied voltage. Kink formation, buckling behavior, tubular transformation and eventual breakdown of the system were observed. The tubular formation was attributed to a transformation from SWCNT ropes to multi-walled carbon nanotube (MWCNT) structures. It is likely mediated by the patching and tearing mechanism which is promoted primarily by the mobile vacancies generated due to current-induced heating and, to some extent, by electron irradiation.

In situ TEM study of irradiation-induced transformation in TiNi shape memory alloys

2003 ◽  
Vol 792 ◽  
Author(s):  
X. T. Zu ◽  
F.R. Wan ◽  
S. Zhu ◽  
L. M. Wang
Keyword(s):  
Phase Transformation ◽  
Martensitic Transformation ◽  
Shape Memory Alloys ◽  
Shape Memory ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Critical Voltage ◽  
In Situ Tem ◽  
In Situ Observation

ABSTRACTTiNi shape memory alloy (SMA) has potential applications for nuclear reactors and its phase stability under irradiation is becoming an important topic. Some irradiation-induced diffusion-dependent phase transformations, such as amorphization, have been reported before. In the present work, the behavior of diffusion-independent phase transformation in TiNi SMA was studied by electron irradiation at room temperature. The effect of irradiation on the martensitic transformation of TiNi shape memory alloys was studied by Transmission Electron Microscopy (TEM) with in-situ observation and differential scanning calorimeter (DSC). The results of TEM and DSC measurements show that the microstructure of samples is R phase at room temperature. Electron irradiations were carried out using several different TEM with accelerating voltage of 200 kV, 300 kV, 400 kV and 1000 kV. Also the accelerating voltage in the same TEM was changed to investigate the critical voltage for the effect of irradiation on phase transformation. It was found that a phase transformation occurred under electron irradiation above 320 kV, but never appeared at 300 kV or lower accelerating voltage. Such phase transformation took place in a few seconds of irradiation and was independent of atom diffusion. The mechanism of Electron-irradiation-induced the martensitic transformation due to displacements of atoms from their lattice sites produced by the accelerated electrons.

scholarly journals Selective Nitration of Chlorobenzene by NO2 in the Alkali Zeolite NaZSM-5

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Scott J. Kirkby
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Temperature Dependent ◽  
Reaction Conditions ◽  
Cation Site ◽  
Zeolite Lattice ◽  
Reaction Proceeds ◽  
Ft Ir ◽  
Electron Donation

Chlorobenzene was reacted with NO2, in the initially acid-free zeolite NaZSM-5, to yield para-chloronitrobenzene exclusively. The precursors were loaded sequentially into self-supporting pellets of the zeolite, contained within a stainless steel cell, from the gas phase. The reaction proceeds spontaneously at room temperature. It is, however, very temperature dependent and effectively ceases at zero degrees Celsius. The reaction was monitored in situ using FT-IR. The active nitrating agent is formed from the partial electron donation by the NO2 to the Na+ cations present in the zeolite lattice. Under the reaction conditions, chlorobenzene is not readily mobile through the pore system; thus, only the molecules adsorbed near a cation site react to form para-chloronitrobenzene.

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