Passive Component Enhancements in High-Temperature Electronic Devices: A Deterioration Mechanism for Metal Electrodes in Ceramic Film Resistors

2020 ◽  
Vol 59 (22) ◽  
pp. 10483-10492
Author(s):  
Tomohiko Nakajima ◽  
Takeshi Ito ◽  
Hisakazu Nagata ◽  
Yoshinobu Nakamura ◽  
Takahiro Matsui ◽  
...  
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
Passive Component ◽  
Metal Electrodes ◽  
Ceramic Film ◽  
Deterioration Mechanism ◽  
High Temperature Electronic

scholarly journals Photoluminescence between 3.36 eV and 3.41 eV from GaN Epitaxial Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
M. A. Poisson ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electronic Devices ◽  
Basic Material ◽  
Epitaxial Layers ◽  
Important Place ◽  
Impurity Defects ◽  
High Temperature Electronic

GaN, its alloys, QWs and MQWs have gained an important place among shortwavelength optical emitters and high temperature electronic devices [1,2]. The performance of such devices is limited by the presence of native and impurity defects. The understanding of the optical properties of the basic material allows us to improve its quality and thus increase the performance of these materials.

scholarly journals Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 224 ◽  
Author(s):  
Qianqian Guo ◽  
Fei Lu ◽  
Qiulin Tan ◽  
Tianhao Zhou ◽  
Jijun Xiong ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Harsh Environments ◽  
Indium Gallium Zinc Oxide ◽  
Testing Methods ◽  
Forward Current ◽  
Indium Gallium ◽  
The Relationship ◽  
High Temperature Electronic

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

scholarly journals High-temperature electronic devices enabled by hBN-encapsulated graphene

2019 ◽  
Vol 114 (12) ◽  
pp. 123104 ◽  
Author(s):  
Makars Šiškins ◽  
Ciaran Mullan ◽  
Seok-Kyun Son ◽  
Jun Yin ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
High Temperature Electronic

DIP Test Socket Characterization for 300°C

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000213-000219 ◽  
Author(s):  
David Shaddock ◽  
Liang Yin ◽  
Zhenzhen Shen ◽  
Zhangming Zhou ◽  
R. Wayne Johnson
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
Circuit Board ◽  
Test Fixture ◽  
Prototype Test ◽  
Test Board ◽  
Functional Reliability ◽  
Long Lifetime ◽  
High Temperature Electronic ◽  
Dip Test

Demonstrating functional reliability testing of high temperature electronic devices for long lifetime at 300°C requires electrical test fixtures with even better reliability. Advances in complexity of SiC devices and the need for increased accelerated tests motivate the need for a reliable test fixture at high temperature. The design, fabrication and testing of a prototype test board using commercially available materials shows stability beyond 2000 hours. The approach uses an alumina circuit board with thick film conductors interconnecting an array of BeNi contacts to surface pads. The pads are connected to high temperature wires using spring loaded contacts so that the circuit board may be removed.

The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000214-000221
Author(s):  
Bob Hunt
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Reliable Operation ◽  
Packaging Technology ◽  
High Temperature Electronic

This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

Solid Electrolytic Capacitors Designed for High Temperature Applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000142-000152 ◽  
Author(s):  
Randy Hahn ◽  
Kristin Tempel
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Tantalum Pentoxide ◽  
Passive Component ◽  
Surface Mount ◽  
Electrolytic Capacitors ◽  
Developed Surface ◽  
Design And Manufacturing ◽  
Materials Used ◽  
Temperature Applications

For decades the maximum recommended operating temperature of solid electrolytic capacitors was 125°C. Responding to needs in the automotive and downhole drilling industries passive component manufacturers developed surface mount tantalum capacitors rated at 150°C in 2002–2003. Since that time the industry has introduced high temperature capable tantalum capacitors generally in 25°C increments roughly every four years. Today multiple manufacturers have products rated at 230°C poised for market release. The tantalum anode, tantalum pentoxide dielectric and manganese dioxide primary cathode material stand up well to these temperatures, although some optimization of the design and manufacturing process for these materials have been required. The primary challenges encountered when developing solid electrolytic capacitors with high temperature capabilities are associated with the carbon, silver and epoxy encapsulant materials used in conventional surface mount tantalum capacitors. Capacitor manufacturers have taken different paths to overcome these challenges. We have developed a metallized plating process to avoid issues associated with silver paints utilized in conventional Ta capacitors. We have worked with suppliers, or developed in house capabilities, to manufacture the other materials required to withstand the rigors of high temperature applications. This paper will discuss these challenges and provide reliability test data on a recently developed tantalum surface mount series capable of continuous operation at 230°C.

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