high temperature electronic
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Author(s):  
B. V. Politov ◽  
A. Yu. Suntsov

Complex oxides with the general formula Pr1−xYxBaCo2−yNiyO6−δ (x = 0, 0.1, y = 0, 0.2) were successfully synthesized via combustion of organo-metallic precursors.


Author(s):  
Jerzy Szalapak ◽  
Konrad Kielbasinski ◽  
Lucja Dybowska-Sarapuk ◽  
Jakub Krzeminski ◽  
Marian Teodorczyk ◽  
...  

Abstract 90% of High Temperature Electronic devices operate in temperatures in range from 150 to 300ºC and for such temperature needs, technologies typical for the military range might be adapted. To make it possible, new joining techniques are developed, one of which is use of pastes with silver nanoparticles sintered with Low Temperature Joining Technique. Silver sintered joints have three times higher thermal conductivity and five times lower electrical resistivity than typical solders, while being able to operate in temperatures reaching 350ºC. In current paper, the authors show the impact of additions of carbon nanoparticles on joints prepared in LTJT technology. The authors prove, that an addition of few percent of graphene nanoplatelets or carbon nanotubes improves joints mechanical, thermal and electrical properties, while ensuring proper rheology of pastes.


2019 ◽  
Vol 114 (12) ◽  
pp. 123104 ◽  
Author(s):  
Makars Šiškins ◽  
Ciaran Mullan ◽  
Seok-Kyun Son ◽  
Jun Yin ◽  
Kenji Watanabe ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 224 ◽  
Author(s):  
Qianqian Guo ◽  
Fei Lu ◽  
Qiulin Tan ◽  
Tianhao Zhou ◽  
Jijun Xiong ◽  
...  

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.


2018 ◽  
Vol 281 ◽  
pp. 767-773
Author(s):  
Zheng Li ◽  
Wei Pan

The first principle calculation as well as the Boltzmann transport calculation have been employed to study the high temperature electronic transport properties of pyrochlore La2Zr2O7. Combing constant scattering time approximation and experiment data, the electronic thermal conductivity and electron concentration are calculated as a function of temperature. The electronic thermal conductivity is 2.6×10-4 W/(m.s) at 1270K and 7.2×10-3 W/(m.s) at 1770K. The electron concentration increase rapidly with when the temperature is above 1600K.


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