Solution-Processed Natural Konjac Glucomannan Material for Resistive Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽

10.1039/c7nr01840a ◽

2017 ◽

Vol 9 (40) ◽

pp. 15314-15322 ◽

Cited By ~ 13

Author(s):

Se-I Oh ◽

Janardhanan R. Rani ◽

Sung-Min Hong ◽

Jae-Hyung Jang

Keyword(s):

Graphene Oxide ◽

Iron Oxide ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Solution Processed ◽

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Fabrication of resistive switching memory based on solution processed PMMA-HfOxblended thin films

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa5133 ◽

2017 ◽

Vol 32 (2) ◽

pp. 025009 ◽

Cited By ~ 10

Author(s):

Jae-Won Lee ◽

Won-Ju Cho

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Solution Processed ◽

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Journal of Materials Chemistry ◽

10.1039/c2jm33032f ◽

2012 ◽

Vol 22 (34) ◽

pp. 17568 ◽

Cited By ~ 24

Author(s):

Doo Hyun Yoon ◽

Si Joon Kim ◽

Joohye Jung ◽

Hyun Soo Lim ◽

Hyun Jae Kim

Keyword(s):

Nickel Oxide ◽

Resistive Switching ◽

Low Voltage ◽

Ni Nanoparticles ◽

Solution Processed ◽

Unipolar Resistive Switching ◽

Flexible resistive switching memory devices composed of solution-processed GeO2:S films

Microelectronic Engineering ◽

10.1016/j.mee.2012.05.032 ◽

2012 ◽

Vol 97 ◽

pp. 122-125 ◽

Cited By ~ 3

Author(s):

Isaac Chung ◽

Kyoungah Cho ◽

Junggwon Yun ◽

Sangsig Kim

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Solution Processed ◽

Endurance degradation of solution-processed ZnO polycrystalline film-based resistive switching memory

SCIENTIA SINICA Physica, Mechanica & Astronomica ◽

10.1360/sspma-2019-0348 ◽

2020 ◽

Vol 50 (7) ◽

pp. 077301

Author(s):

XiaoYan QIU ◽

JianBo WANG ◽

Xue JIANG ◽

YingYue WANG ◽

RuiLian LAI

Keyword(s):

Resistive Switching ◽

Polycrystalline Film ◽

Solution Processed ◽

Effect of electrode material on resistive switching memory behavior of solution-processed resistive switches: Realization of robust multi-level cells

Thin Solid Films ◽

10.1016/j.tsf.2017.01.063 ◽

2017 ◽

Vol 625 ◽

pp. 87-92 ◽

Cited By ~ 11

Author(s):

Jaewon Jang ◽

Vivek Subramanian

Keyword(s):

Resistive Switching ◽

Electrode Material ◽

Solution Processed ◽

Resistive Switches ◽

Multi Level ◽

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c16556 ◽

2020 ◽

Vol 12 (50) ◽

pp. 56186-56194

Author(s):

Pengfei Li ◽

Dan Wang ◽

Zongbo Zhang ◽

Yunlong Guo ◽

Lang Jiang ◽

...

Keyword(s):

Resistive Switching ◽

Room Temperature ◽

Solution Processed ◽

Temperature Solution ◽

Improvement of On/Off Ratio in Solution-Processed Graphene-Zinc Oxide Resistive Switching Memory by Blending with Polystyrene

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13674 ◽

2016 ◽

Vol 16 (12) ◽

pp. 12918-12922

Author(s):

Chaewon Kim ◽

Fatima Tuz Johra ◽

Jiyoung Kim ◽

Jaegab Lee ◽

Woo-Gwang Jung ◽

...

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Solution Processed ◽

Solution processed flexible resistive switching memory based on Al-In-O self-mixing layer

Journal of Applied Physics ◽

10.1063/1.5041469 ◽

2018 ◽

Vol 124 (10) ◽

pp. 104501 ◽

Cited By ~ 6

Author(s):

Weijie Duan ◽

Yong Tang ◽

Xiaoci Liang ◽

Chang Rao ◽

Jinxing Chu ◽

...

Keyword(s):

Resistive Switching ◽

Mixing Layer ◽

Solution Processed ◽

Multistate data storage in solution-processed NiO-based resistive switching memory

Semiconductor Science and Technology ◽

10.1088/1361-6641/aae06c ◽

2018 ◽

Vol 33 (11) ◽

pp. 115007 ◽

Cited By ~ 3

Author(s):

Jinxing Chu ◽

Ya Li ◽

Xihua Fan ◽

Huihong Shao ◽

Weijie Duan ◽

...

Keyword(s):

Data Storage ◽

Resistive Switching ◽

Solution Processed ◽