Multistate data storage in solution-processed NiO-based resistive switching memory

2018 ◽  
Vol 33 (11) ◽  
pp. 115007 ◽  
Author(s):  
Jinxing Chu ◽  
Ya Li ◽  
Xihua Fan ◽  
Huihong Shao ◽  
Weijie Duan ◽  
...  
Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.


2014 ◽  
Vol 5 (9) ◽  
pp. 3404-3408 ◽  
Author(s):  
Benlin Hu ◽  
Chengyuan Wang ◽  
Jiangxin Wang ◽  
Junkuo Gao ◽  
Kai Wang ◽  
...  

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.


Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.


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