Multistate data storage in solution-processed NiO-based resistive switching memory

2018 ◽  
Vol 33 (11) ◽  
pp. 115007 ◽  
Author(s):  
Jinxing Chu ◽  
Ya Li ◽  
Xihua Fan ◽  
Huihong Shao ◽  
Weijie Duan ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Flexible resistive switching memory devices composed of solution-processed GeO2:S films

2012 ◽  
Vol 97 ◽  
pp. 122-125 ◽  
Author(s):  
Isaac Chung ◽  
Kyoungah Cho ◽  
Junggwon Yun ◽  
Sangsig Kim
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage

2020 ◽  
Vol 7 (17) ◽  
pp. 2000630
Author(s):  
Chia‐Shuo Li ◽  
Sheng‐Wen Kuo ◽  
Yu‐Tien Wu ◽  
Po‐Hang Chang ◽  
I‐Chih Ni ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Van Der Waals ◽  
Resistive Switching Memory ◽  
Bismuth Iodide ◽  
Switching Memory

scholarly journals Inorganic–organic hybrid polymer with multiple redox for high-density data storage

2014 ◽  
Vol 5 (9) ◽  
pp. 3404-3408 ◽  
Author(s):  
Benlin Hu ◽  
Chengyuan Wang ◽  
Jiangxin Wang ◽  
Junkuo Gao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Density ◽  
Hybrid Polymer ◽  
Density Data ◽  
Resistive Switching Memory ◽  
Organic Hybrid ◽  
Switching Memory

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.

scholarly journals Endurance degradation of solution-processed ZnO polycrystalline film-based resistive switching memory

2020 ◽  
Vol 50 (7) ◽  
pp. 077301
Author(s):  
XiaoYan QIU ◽  
JianBo WANG ◽  
Xue JIANG ◽  
YingYue WANG ◽  
RuiLian LAI
Keyword(s):  
Resistive Switching ◽  
Polycrystalline Film ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Lead Free ◽  
Multilevel Data ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Free Air ◽  
Stable Hybrid ◽  
Switching Memory

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.

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