Gate Modulation of Threshold Voltage Instability in Multilayer InSe Field Effect Transistors

2015 ◽  
Vol 7 (48) ◽  
pp. 26691-26695 ◽  
Author(s):  
Wei Feng ◽  
Wei Zheng ◽  
XiaoShuang Chen ◽  
Guangbo Liu ◽  
PingAn Hu
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Instability

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

2007 ◽  
Vol 90 (14) ◽  
pp. 143502 ◽  
Author(s):  
C. Z. Zhao ◽  
M. B. Zahid ◽  
J. F. Zhang ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

2008 ◽  
Vol 600-603 ◽  
pp. 807-810 ◽  
Author(s):  
Aivars J. Lelis ◽  
Daniel B. Habersat ◽  
Ronald Green ◽  
Neil Goldsman
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Response ◽  
Charge Trapping ◽  
Gate Bias ◽  
Voltage Instability ◽  
Increasing Temperature ◽  
Mobile Ions ◽  
Interfacial Charge

We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors (MOSFETs) from various sources and/or processes due to gate-bias stressing as a function of temperature. In some cases we see a dramatic increase in the instability with increasing temperature, consistent with interfacial charge trapping or de-trapping. In other cases the temperature response is very slight, and in still other cases we actually see VT instabilities that move in the opposite direction with bias, indicating the presence of mobile ions.

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

2019 ◽  
Vol 216 (24) ◽  
pp. 1900538 ◽  
Author(s):  
Mingchao Yang ◽  
Liwen Sang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Hongdong Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors

2012 ◽  
Vol 23 (48) ◽  
pp. 485201 ◽  
Author(s):  
Minhyeok Choe ◽  
Woojin Park ◽  
Jang-Won Kang ◽  
Sehee Jeong ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Zno Nanowire ◽  
Bias Stress ◽  
Voltage Instability ◽  
Gate Bias Stress
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