scholarly journals Monitoring Volumetric Changes in Silicon Thin-Film Anodes through In Situ Optical Diffraction Microscopy

2016 ◽  
Vol 8 (27) ◽  
pp. 17642-17650 ◽  
Author(s):  
Jonathon Duay ◽  
Kjell W. Schroder ◽  
Sankaran Murugesan ◽  
Keith J. Stevenson
Keyword(s):  
Thin Film ◽  
Optical Diffraction ◽  
Silicon Thin Film ◽  
Diffraction Microscopy

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon

Investigation of Aluminium Diffusion into an Amorphous Silicon Thin Film at High Temperature by In Situ Spectroscopic Ellipsometry

2008 ◽  
Vol 55-57 ◽  
pp. 449-452
Author(s):  
W. Luangtip ◽  
S. Rotbuathong ◽  
P. Chindaudom ◽  
M. Horphatum ◽  
V. Patthanasetthakul ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Room Temperature ◽  
Interface Layer ◽  
Effective Medium Approximation ◽  
Silicon Thin Film ◽  
Temperature Controlled ◽  
Si Thin Film

This work is to study the diffusion of Al into amorphous silicon (a-Si) thin film at the elevated temperature by in-situ Spectroscopic Ellipsometry (SE). The sputtered a-Si film 60 nm thick on an optically opaque Al (100 nm) layer on silicon wafer was heated in a temperature controlled heating sample stage from room temperature to 300°C and slowly cooled down to room temperature while the dynamic SE data were measured. It was found that the ∆ and Ψ spectra began to change quickly at 200°C until the temperature reached 250°C, then continue to changed very slowly until 300°C. No significant change could be observed while the sample was cooling down to room temperature. The full spectral SE measurements were also taken at every 50°C steps and used to model the diffusion of Al into the top a-Si film. The interface layer due to diffusion was modeled by Bruggeman Effective Medium Approximation (EMA) theory as the mixture of Al and Si.

In situ spectromicroscopic study of nickel induced lateral crystallization of amorphous silicon thin film using SPESM

2007 ◽  
Vol 601 (2) ◽  
pp. 301-307 ◽  
Author(s):  
Ie-Hong Hong ◽  
Ting-Chang Hsu ◽  
Shang-Chieh Yen ◽  
Fu-Shiang Lin ◽  
Mao-Lin Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
Lateral Crystallization

scholarly journals Damage and recovery induced by a high energy e-beam in a silicon nanofilm

RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 37032-37038 ◽  
Author(s):  
Xianlin Qu ◽  
Qingsong Deng
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Silicon Thin Film ◽  
Transmission Electron

Herein, electron beam-induced damage and recovery of a silicon thin film was investigatedin situ viatransmission electron microscopy (TEM).

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