scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

scholarly journals Development of a Novel Method for the Fabrication of Nanostructured Zr(x)Ni(y) Catalyst to Enhance the Desorption Properties of MgH2

Catalysts ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 849
Author(s):  
Gracia Shokano ◽  
Zahir Dehouche ◽  
Basile Galey ◽  
Georgeta Postole
Keyword(s):  
Hydrogen Desorption ◽  
Milling Process ◽  
Hydrogen Release ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electron Microscope Analysis ◽  
Novel Method ◽  
Temperature Programmed ◽  
The Impact

The present work involves the development of a novel method for the fabrication of zirconium nickel (Zr(x)Ni(y)) alloy used as a nanocatalyst to improve the hydrogen storage properties of the Mg/MgH2 system. The catalyst was fabricated through the high-pressure reactor and activated under hydrogen prior to being mechanically milled with the MgH2 for 5 h under argon. The microstructure characterisation of the samples was determined via SEM-EDX (scanning electron microscope analysis–energy dispersive X-ray spectroscopy), XRD (X-ray diffraction) and FE-HRTEM (field emission high resolution transmission electron microscopy), and the desorption characteristic of the nanocomposite (10 wt.% Zr(x)Ni(y)–MgH2) was determined via TPD (temperature-programmed desorption). The nanostructured MgH2 powder milled with 10 wt.% of the activated Zr(x)Ni(y) based nanocatalyst resulted in a faster hydrogen release—5.9 H2-wt.% at onset temperature 210 °C/peak temperature 232 °C. The observed significant improvement in the hydrogen desorption properties was likely to be the result of the impact of the highly dispersed catalyst on the surface of the Mg/MgH2 system, the reduction in particle size during the ball milling process and/or the formation of Mg0.996Zr0.004 phase during the milling process.

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

scholarly journals Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 962-967
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Laügt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Optical properties of GaN with Ga and N polarity

2001 ◽  
Vol 693 ◽  
Author(s):  
M. A. Reshchikov ◽  
D. Huang ◽  
F. Yun ◽  
P. Visconti ◽  
T. King ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Radiative Efficiency ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
And Inversion

AbstractWe compared photoluminescence (PL) and cross-sectional transmission electron microscopy (TEM) characteristics of GaN samples with Ga and N polarities grown by molecular beam epitaxy (MBE) on sapphire substrates. Ga-polar films grown at low temperature typically have very smooth surfaces, which are extremely difficult to etch with acids or bases. In contrast, the N-polar films have rougher surfaces and can be easily etched in hot H3PO4 or KOH. The quality of the X-ray diffraction spectra is also much better in case of Ga-polar films. Surprisingly, PL efficiency is always much higher in the N-polar GaN, yet the features and shape of the PL spectra are comparable for both polarities. We concluded that, despite the excellent quality of the surface, MBE-grown Ga-polar GaN layers contain higher concentration of nonradiative defects. From the analyses of cross-sectional TEM investigations, we have found that Ga-polar films have high density of threading dislocations (5x109 cm-2) and low density of inversion domains (1x107 cm-2). For N-polar GaN the situation is the reverse: the density of dislocations and inversion domains are 5x108 and ~1x1011 cm-2, respectively. One of the important conclusions derived from the combined PL and TEM study is that inversion domains do not seem to affect the radiative efficiency very adversly, whereas dislocations reduce it significantly.

scholarly journals Top-Down Synthesis of a Lamivudine-Zidovudine Nano Co-Crystal

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 33
Author(s):  
Bwalya A. Witika ◽  
Vincent J. Smith ◽  
Roderick B. Walker
Keyword(s):  
Electron Microscopy ◽  
Glycol Succinate ◽  
Lauryl Sulfate ◽  
X Ray Diffraction ◽  
Top Down ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
Milling Medium ◽  
The Impact

Lamivudine (3TC) and zidovudine (AZT) are antiretroviral agents used to manage HIV/AIDS infection. A wet media milling top-down approach was used to develop and produce nano co-crystals of 3TC and AZT. Micro co-crystals were prepared by solvent evaporation and subsequently milled in the presence of two surfactants, viz., sodium lauryl sulfate (SLS) and α-tocopheryl polyethylene glycol succinate 1000 (TPGS 1000). Optimisation was undertaken using design of experiments (DoE) and response surface methodology (RSM) to establish and identify parameters that may affect the manufacturing of nano co-crystals. The impact of SLS and TPGS 1000 concentration, milling time, and number of units of milling medium on the manufacturing of nano co-crystals, was investigated. The critical quality attributes (CQA) monitored were particle size (PS), Zeta potential (ZP), and polydispersity index (PDI). Powder X-ray diffraction, Fourier transform infrared spectroscopy, differential scanning calorimetry, transmission electron microscopy, energy dispersive X-ray spectroscopy scanning electron microscopy, and cytotoxicity assays were used for additional characterization of the optimised nano co-crystal. The mean PS, PDI, and ZP of the optimised top-down nanocrystal were 271.0 ± 92.0 nm, 0.467 ± 0.073, and −41.9 ± 3.94 mV, respectively. In conclusion, a simple, inexpensive, rapid, and precise method of nano co-crystal manufacturing was developed, validated, and optimised using DoE and RSM, and the final product exhibited the target CQA.

Mbe Growth of Strained-Layer InSb/InAlSb Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
C.R. Whitehouse ◽  
C.F. Mcconville ◽  
G.M. Williams ◽  
A.G. Cullis ◽  
S.J. Barnett ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Critical Thickness ◽  
Multiple Quantum ◽  
Material System ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
X Ray ◽  
Strained Layer ◽  
Transmission Electron ◽  
Layer Structures

ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.

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