Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor

2014 ◽  
Vol 50 (15) ◽  
pp. 1890 ◽  
Author(s):  
Rafiq Ahmad ◽  
Nirmalya Tripathy ◽  
Da-Un-Jin Jung ◽  
Yoon-Bong Hahn
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Sensor ◽  
Zno Nanorods ◽  
Highly Sensitive ◽  
Effect Transistor

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Piezoelectric coupling in a field-effect transistor with a nanohybrid channel of ZnO nanorods grown vertically on graphene

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 15144-15150 ◽  
Author(s):  
Vinh Quang Dang ◽  
Do-Il Kim ◽  
Le Thai Duy ◽  
Bo-Yeong Kim ◽  
Byeong-Ung Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Zno Nanorods ◽  
Piezoelectric Coupling ◽  
Effect Transistor

Conversion of protein net charge via chemical modification for highly sensitive prion detection using field effect transistor (FET) biosensor

2016 ◽  
Vol 230 ◽  
pp. 374-379 ◽  
Author(s):  
Shofarul Wustoni ◽  
Sho Hideshima ◽  
Shigeki Kuroiwa ◽  
Takuya Nakanishi ◽  
Yasuro Mori ◽  
...  
Keyword(s):  
Chemical Modification ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Net Charge ◽  
Highly Sensitive ◽  
Effect Transistor

A highly sensitive and versatile chiral sensor based on a top-gate organic field effect transistor functionalized with thiolated β-cyclodextrin

The Analyst ◽  
2019 ◽  
Vol 144 (8) ◽  
pp. 2611-2617 ◽  
Author(s):  
Xuepeng Wang ◽  
Yong Wang ◽  
Yifan Wu ◽  
Yin Xiao
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Highly Sensitive ◽  
Effect Transistor

A chiral sensor was successfully constructed by modifying an OFET gate with SH-β-CD.

Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

2011 ◽  
Vol 11 (5) ◽  
pp. 1157-1161 ◽  
Author(s):  
Yuh-Hwa Chang ◽  
Yen-Sheng Lu ◽  
Yu-Liang Hong ◽  
Shangjr Gwo ◽  
J. Andrew Yeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Indium Nitride ◽  
Ph Sensing ◽  
Highly Sensitive ◽  
Effect Transistor
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