scholarly journals Thin film fabrication and characterization of proton conducting lanthanum tungstate

2014 ◽  
Vol 2 (43) ◽  
pp. 18463-18471 ◽  
Author(s):  
Kristin Bergum ◽  
Anna Magrasó ◽  
Helmer Fjellvåg ◽  
Ola Nilsen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Proton Conducting ◽  
Thin Film Fabrication ◽  
Layer Deposition ◽  
Film Fabrication ◽  
Fabrication And Characterization

Thin films of the proton conducting lanthanum tungstate phase, La28−xW4+xO54+δv2−δ, were fabricated by atomic layer deposition (ALD) and characterized by impedance spectroscopy.

Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition

2006 ◽  
Vol 89 (22) ◽  
pp. 222105 ◽  
Author(s):  
Yil-Hwan You ◽  
Byung-Soo So ◽  
Jin-Ha Hwang ◽  
Wontae Cho ◽  
Sun Sook Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Impedance Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Resistance Switching ◽  
Layer Deposition

Fabrication and Characterization of Lead Sulfide Thin Films by Atomic Layer Deposition

2019 ◽  
Vol 16 (4) ◽  
pp. 29-36 ◽  
Author(s):  
Neil P. Dasgupta ◽  
Stephen P. Walch ◽  
Friedrich Prinz
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Lead Sulfide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Fabrication And Characterization

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

2012 ◽  
Vol 717-720 ◽  
pp. 1323-1326
Author(s):  
M. Guziewicz ◽  
W. Jung ◽  
R. Kruszka ◽  
J. Domagala ◽  
Ania Piotrowska ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Deposition Method ◽  
Heterojunction Diode ◽  
Lattice Matching ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Good Lattice ◽  
Fabrication And Characterization

ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107and an ideality factor of 1.21.

Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

2020 ◽  
Vol 49 (14) ◽  
pp. 4306-4314
Author(s):  
Seong Ho Han ◽  
Raphael Edem Agbenyeke ◽  
Ga Yeon Lee ◽  
Bo Keun Park ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Synthesis And Characterization ◽  
Zno Thin Film ◽  
Layer Deposition

Novel zinc precursors were designed, synthesized and used for the deposition of ZnO thin films by ALD.

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