Hydrogen evolution reaction in acidic media on single-crystalline titanium nitride nanowires as an efficient non-noble metal electrocatalyst

2016 ◽  
Vol 4 (10) ◽  
pp. 3673-3677 ◽  
Author(s):  
Yujie Han ◽  
Xin Yue ◽  
Yanshuo Jin ◽  
Xiangdong Huang ◽  
Pei Kang Shen
Keyword(s):  
Titanium Nitride ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Acidic Media ◽  
Single Crystalline ◽  
First Time

Single-crystalline titanium nitride nanowires have been directly synthesized by a novel chemical vapor deposition method and used as efficient catalysts for hydrogen evolution reaction for the first time.

scholarly journals In situ fabrication of dendritic tin-based carbon nanostructures for hydrogen evolution reaction

2020 ◽  
Vol 4 (10) ◽  
pp. 5223-5228
Author(s):  
Oluwafunmilola Ola ◽  
Yu Chen ◽  
Kunyapat Thummavichai ◽  
Yanqiu Zhu
Keyword(s):  
Chemical Vapor Deposition ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Vapor Deposition ◽  
Carbon Nanostructures ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
In Situ Fabrication

In this work, dendritic tin-based carbon nanostructures with different morphologies were synthesized by a facile two-step carbonization and chemical vapor deposition method and were then evaluated for their performance in hydrogen evolution reaction.

Epitaxy-driven vertical growth of single-crystalline cobalt nanowire arrays by chemical vapor deposition

2015 ◽  
Vol 3 (1) ◽  
pp. 100-106 ◽  
Author(s):  
Si-in Kim ◽  
Hana Yoon ◽  
Hyoban Lee ◽  
Sunghun Lee ◽  
Younghun Jo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanowire Arrays ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Vertical Orientation ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Co Nanowires

Ferromagnetic single-crystalline Co nanowires (NWs) aligned in a vertical orientation are epitaxially grown on m-cut sapphire substrates by a rapid and versatile chemical vapor deposition method. They were transformed into Co3O4 nanotubes by thermal annealing under dilute O2 conditions.

scholarly journals Fabrication of submillimeter-sized single-crystalline graphene arrays by a commercial printing-assisted CVD method

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17800-17805 ◽  
Author(s):  
Wei Xu ◽  
Wei Wang ◽  
Zhiyong Guo ◽  
Zhaoping Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Single Crystalline ◽  
Cvd Method

Submillimeter-sized single-crystalline graphene arrays have been successfully prepared by a commercial printing-assisted chemical vapor deposition method.

Growth of single-crystalline nickel silicide nanowires with excellent physical properties

CrystEngComm ◽  
2015 ◽  
Vol 17 (9) ◽  
pp. 1911-1916 ◽  
Author(s):  
Jen-Yi Lin ◽  
Hsiu-Ming Hsu ◽  
Kuo-Chang Lu
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nickel Silicide ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Single Crystalline

Single-crystalline NiSi2, Ni2Si and Ni31Si12 nanowires with outstanding characteristics were synthesized through a nickel transport chemical vapor deposition method.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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