High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

2015 ◽  
Vol 3 (20) ◽  
pp. 5253-5258 ◽  
Author(s):  
Yang Huang ◽  
Jing Lin ◽  
Liang Li ◽  
Lulu Xu ◽  
Weijia Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
Building Blocks ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Sno2 Nanobelts

Sn-nanodot-embedded SnO2 nanobelts are promising as building blocks for high performance solar-blind UV photodetectors.

scholarly journals Solar-Blind Photodetector Based on NaTaO3/TiO2 Composite Film with Enhanced Photoelectric Performance

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1178
Author(s):  
Min Zhang ◽  
Zhenjiang Li ◽  
Yunfei Zhao ◽  
Zhaofeng Wu ◽  
Jun Zhang ◽  
...  
Keyword(s):  
Response Time ◽  
Dark Current ◽  
High Performance ◽  
Uv Light ◽  
Fast Response ◽  
Current Ratio ◽  
Coated Glass Substrate ◽  
Ultraviolet Detectors ◽  
Photoelectric Performance ◽  
Solar Blind

In this study, ultraviolet detectors based on NaTaO3/TiO2 were fabricated with enhanced detection performance towards solar-blind (200–280 nm) light. A TiO2 seed layer was introduced and served as a buffer layer between the fluorine tin oxide (FTO)-coated glass substrate and the TiO2 film, which increased the adhesion between them. The periodic stability and photoelectric characteristics of the detectors were studied and analyzed. The detectors showed a high performance when illuminated by 265 nm and 254 nm UV light. At −15 V bias, the dark current of the detector was only 70 pA. Under the bias of −15 V and the illumination of 254 nm, the maximum photo-to-dark current ratio reached 20, and the response time was less than 300 ms. Moreover, the detector exhibited a fast response time and remained very stable after numerous testing cycles. These results demonstrate the potential application of NaTaO3/TiO2 composites in UV detection.

scholarly journals Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Dongdong D. Meng ◽  
Xueqiang Q. Ji ◽  
Dafang F. Wang ◽  
Zhengwei W. Chen
Keyword(s):  
Uv Light ◽  
Fast Response ◽  
Light Illumination ◽  
Uv Detector ◽  
Back Gate ◽  
Uv Photodetectors ◽  
Mos Structure ◽  
Solar Blind ◽  
Decay Times ◽  
Excellent Stability

Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.

scholarly journals High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

Nano Energy ◽  
2018 ◽  
Vol 48 ◽  
pp. 551-559 ◽  
Author(s):  
Somak Mitra ◽  
Assa Aravindh ◽  
Gobind Das ◽  
Yusin Pak ◽  
Idris Ajia ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Laser Ablation ◽  
Femtosecond Laser ◽  
High Performance ◽  
Femtosecond Laser Ablation ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors

2022 ◽  
Vol 120 (1) ◽  
pp. 011101
Author(s):  
Qichao Hou ◽  
Kewei Liu ◽  
Dongyang Han ◽  
Yongxue Zhu ◽  
Xing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Uv Photodetectors ◽  
Mocvd Growth ◽  
Solar Blind

Highly selective ozone-treated β-Ga2O3 solar-blind deep-UV photodetectors

2020 ◽  
Vol 117 (26) ◽  
pp. 261101
Author(s):  
Suhyun Kim ◽  
Jihyun Kim
Keyword(s):  
Uv Photodetectors ◽  
Solar Blind ◽  
Deep Uv

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Sign in / Sign up

Export Citation Format

Share Document