Electronic properties of red and black phosphorous and their potential application as photocatalysts

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 80872-80884 ◽  
Author(s):  
Kaining Ding ◽  
Lili Wen ◽  
Shuping Huang ◽  
Yulu Li ◽  
Yongfan Zhang ◽  
...  
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Electronic Properties ◽  
Potential Application ◽  
Separation Efficiency ◽  
Charge Carriers ◽  
Band Edge ◽  
Strong Response ◽  
Black Phosphorous ◽  
Band Edge Position

The promising potential of monolayerrPandbPas photocatalysts was identified, due to their suitable band gap, appropriate band edge position, higher mobility and separation efficiency of charge carriers, and strong response to visible light.

scholarly journals Phase transition-induced band edge engineering of BiVO4 to split pure water under visible light

2015 ◽  
Vol 112 (45) ◽  
pp. 13774-13778 ◽  
Author(s):  
Won Jun Jo ◽  
Hyun Joon Kang ◽  
Ki-Jeong Kong ◽  
Yun Seog Lee ◽  
Hunmin Park ◽  
...  
Keyword(s):  
Phase Transition ◽  
Visible Light ◽  
Band Gap ◽  
Conduction Band ◽  
Density Functional ◽  
Density Functional Theory Calculation ◽  
Pure Water ◽  
Volume Growth ◽  
Band Edge ◽  
Conduction Band Edge

Through phase transition-induced band edge engineering by dual doping with In and Mo, a new greenish BiVO4 (Bi1-XInXV1-XMoXO4) is developed that has a larger band gap energy than the usual yellow scheelite monoclinic BiVO4 as well as a higher (more negative) conduction band than H+/H2 potential [0 VRHE (reversible hydrogen electrode) at pH 7]. Hence, it can extract H2 from pure water by visible light-driven overall water splitting without using any sacrificial reagents. The density functional theory calculation indicates that In3+/Mo6+ dual doping triggers partial phase transformation from pure monoclinic BiVO4 to a mixture of monoclinic BiVO4 and tetragonal BiVO4, which sequentially leads to unit cell volume growth, compressive lattice strain increase, conduction band edge uplift, and band gap widening.

scholarly journals The Ternary Heterostructures of BiOBr/Ultrathin g-C3N4/Black Phosphorous Quantum Dot Composites for Photodegradation of Tetracycline

Polymers ◽  
2018 ◽  
Vol 10 (10) ◽  
pp. 1118 ◽  
Author(s):  
Tianhao Jiang ◽  
Chaoqun Shang ◽  
Qingguo Meng ◽  
Mingliang Jin ◽  
Hua Liao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Visible Light ◽  
Photocatalytic Degradation ◽  
Efficient Method ◽  
Charge Separation ◽  
Separation Efficiency ◽  
Photodegradation Efficiency ◽  
Charge Separation Efficiency ◽  
Black Phosphorous ◽  
Water Bath Heating

Herein, we synthesized BiOBr/ultrathin g-C3N4/ternary heterostructures modified with black phosphorous quantum dots using a simple water bath heating and sonication method. The ternary heterostructure was then used for the photocatalytic degradation of tetracycline in visible light, with an efficiency as high as 92% after 3 h of irradiation. Thus, the photodegradation efficiency is greatly improved compared to that of ultrathin g-C3N4, BiOBr, and black phosphorous quantum dots alone. The synthesized ternary heterostructure improves the charge separation efficiency, thus increasing the photodegradation efficiency. This work provides a new and efficient method for the degradation of antibiotics in the environment.

Electronic Properties of Si - Ge Micro Nipi Structures

1988 ◽  
Vol 116 ◽  
Author(s):  
L. H. Yang ◽  
C. Y. Fong ◽  
J. S. Nelson
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Real Space ◽  
Band Alignment ◽  
Charge Carriers ◽  
Acceptor State ◽  
Direct Band Gap ◽  
N Doping ◽  
Direct Band ◽  
Donor State

AbstractElectronic properties of the n-doping--insulator--p-doping--insulator structures in ultra thin strained [001] Si - Ge superlattice have been studied theoretically. The Ge - layer is used as one of the insulating region. The Al and As atoms are treated as impurities. The superlattice ((Si)10 -(Ge)2) exhibits an indirect gap in reciprocal space and the staggered band alignment in real space. With doping, the samples show a direct band gap and staggered band alignment. The acceptor state is associated with the Al-Si bonding state, while the donor state is derived from the As s-like state. The separation of the charge carriers in the real space can be obtained.

GaS0.5Te0.5 monolayer as an efficient water splitting photocatalyst

2017 ◽  
Vol 19 (23) ◽  
pp. 15394-15402 ◽  
Author(s):  
Yujie Bai ◽  
Qinfang Zhang ◽  
Gaixia Luo ◽  
Yali Bu ◽  
Lei Zhu ◽  
...  
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Water Splitting ◽  
Band Edge ◽  
Redox Potentials ◽  
Promising Candidate ◽  
Light Water ◽  
Direct Band Gap ◽  
Direct Band

GaS0.5Te0.5 monolayer is a promising candidate as a visible-light water splitting photocatalyst, which is a direct band gap (2.09 eV) semiconductor, and has an appropriate band edge alignment with respect to the water redox potentials in both acidic and neutral environments.

scholarly journals Ag2WO4 nanorods decorated with AgI nanoparticles: Novel and efficient visible-light-driven photocatalysts for the degradation of water pollutants

2018 ◽  
Vol 9 ◽  
pp. 1308-1316 ◽  
Author(s):  
Shijie Li ◽  
Shiwei Hu ◽  
Wei Jiang ◽  
Yanping Liu ◽  
Yu Liu ◽  
...  
Keyword(s):  
Visible Light ◽  
High Performance ◽  
Separation Efficiency ◽  
Environmental Issues ◽  
Active Species ◽  
Charge Carriers ◽  
Pollutant Degradation ◽  
Absorption Properties ◽  
Simple Preparation ◽  
Visible Light Driven

To develop efficient and stable visible-light-driven (VLD) photocatalysts for pollutant degradation, we synthesized novel heterojunction photocatalysts comprised of AgI nanoparticle-decorated Ag2WO4 nanorods via a facile method. Various characterization techniques, including XRD, SEM, TEM, EDX, and UV–vis DRS were used to investigate the morphology and optical properties of the as-prepared AgI/Ag2WO4 catalyst. With AgI acting as the cocatalyst, the resulting AgI/Ag2WO4 heterostructure shows excellent performance in degrading toxic, stable pollutants such as rhodamine B (RhB), methyl orange (MO) and para-chlorophenol (4-CP). The high performance is attributed to the enhanced visible-light absorption properties and the promoted separation efficiency of charge carriers through the formation of the heterojunction between AgI and Ag2WO4. Additionally, AgI/Ag2WO4 exhibits durable stability. The active species trapping experiment reveals that active species (O2 •− and h+) dominantly contribute to RhB degradation. The AgI/Ag2WO4 heterojunction photocatalyst characterized in this work holds great potential for remedying environmental issues due to its simple preparation method and excellent photocatalytic performance.

scholarly journals Enhanced photocatalytic activity of BiOI under visible light irradiation by the modification of MoS2

RSC Advances ◽  
2017 ◽  
Vol 7 (67) ◽  
pp. 42398-42406 ◽  
Author(s):  
Yuzhen Bu ◽  
Junli Xu ◽  
Yawen Li ◽  
Qian Liu ◽  
Xia Zhang
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Separation Efficiency ◽  
Charge Carriers ◽  
Light Irradiation ◽  
Suitable Modification

The suitable modification of MoS2 with 3D hierarchical BiOI could improve the separation efficiency of photogenerated charge carriers.

Effects of crystal structure and composition on the photocatalytic performance of Ta–O–N functional materials

2018 ◽  
Vol 20 (17) ◽  
pp. 12005-12015 ◽  
Author(s):  
Qing-Lu Liu ◽  
Zong-Yan Zhao ◽  
Jian-Hong Yi
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Photocatalytic Performance ◽  
Electronic States ◽  
Functional Materials ◽  
Band Edge ◽  
Suitable Candidate ◽  
Atomic Core ◽  
Band Edge Position

In Ta–O–N functional materials, the interaction between atomic core and valence electronic states, and the overlapping between valence electronic states mainly influence the band gap and the band edge position. According to the requirements, Ta3N5 and TaON are suitable candidate materials for efficient photocatalyst.

scholarly journals Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Daniel J. Trainer ◽  
Aleksei V. Putilov ◽  
Cinzia Di Giorgio ◽  
Timo Saari ◽  
Baokai Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Valence Band ◽  
Chemical Vapor ◽  
Band Edge ◽  
Scanning Tunneling ◽  
Valence Band Edge ◽  
Tunneling Microscopy ◽  
Direct Band

Abstract Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesis technique. Using high resolution scanning tunneling microscopy and spectroscopy (STM/STS), photoemission electron microscopy/spectroscopy (PEEM) and μ-ARPES we investigate the electronic properties of MoS2 as a function of the number of layers at the nanoscale and show in-depth how the band gap is affected by a shift of the valence band edge as a function of the layer number. Green’s function based electronic structure calculations were carried out in order to shed light on the mechanism underlying the observed bandgap reduction with increasing thickness, and the role of the interfacial Sulphur atoms is clarified. Our study, which gives new insight into the variation of electronic properties of MoS2 films with thickness bears directly on junction properties of MoS2, and thus impacts electronics application of MoS2.

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