Step edge structures on the anatase TiO2 (001) surface studied by atomic-resolution TEM and STM

2018 ◽  
Vol 208 ◽  
pp. 325-338 ◽  
Author(s):  
M. Ek ◽  
I. Beinik ◽  
A. Bruix ◽  
S. Wendt ◽  
J. V. Lauritsen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Anatase Tio2 ◽  
Atomic Resolution ◽  
Oxide Surfaces ◽  
Side View ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Top View

Atomic arrangements in oxide surfaces can be uncovered by combining side view imaging using transmission electron microscopy and top view imaging using scanning tunnelling microscopy.

FIB-Based Sample Preparation for Localized SCM and SSRM

2018 ◽  
Author(s):  
Frédéric Lorut ◽  
Alexia Valéry ◽  
Nicolas Chevalier ◽  
Denis Mariolle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side View ◽  
Transmission Electron ◽  
Acceleration Voltage ◽  
Top View

Abstract Dopants imaging using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy are used for identifying doped areas within a device, the latter being analyzed either in a top view or in a side view. This paper presents a sample preparation workflow based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of the method and factors to monitor vigilantly. Dealing with FIB machining, any sample preparation geometry can be achieved, as it is for transmission electron microscopy (TEM) sample preparation: cross-section, planar, or inverted TEM preparation. This may pave the way to novel SCM imaging opportunities. As FIB milling generates a parasitic gallium implanted layer, a mechanical polishing step is needed to clean the specimen prior to SCM imaging. Efforts can be conducted to reduce the thickness of this layer, by reducing the acceleration voltage of the incident gallium ions, to ease sample cleaning.

Analytical microscopy of titanium nitride

1991 ◽  
Vol 69 (3-4) ◽  
pp. 290-297 ◽  
Author(s):  
M. Simard-Normandin ◽  
L. Weaver ◽  
D. Vacca ◽  
D. Rogers ◽  
A. Vitkin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Microelectronic Devices ◽  
Transmission Electron ◽  
Raman Microprobe ◽  
Scanning Tunnelling ◽  
Analytical Microscopy ◽  
Tunnelling Microscopy

We report on microscopy tools for the in-situ analysis of TiN in microelectronic devices. Scanning tunnelling microscopy and Raman microprobe spectroscopy are compared with scanning and transmission electron microscopy.

Atomic-resolution Studies of Ca3Co4O9 using in-situ Scanning Transmission Electron Microscopy

2008 ◽  
Vol 14 (S2) ◽  
pp. 436-437 ◽  
Author(s):  
G Yang ◽  
Y Zhao ◽  
K Sader ◽  
A Bleloch ◽  
RF Klie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
New Mexico ◽  
Scanning Transmission Electron Microscopy ◽  
Atomic Resolution ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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