Significant tunneling magnetoresistance and excellent spin filtering effect in CrI3-based van der Waals magnetic tunnel junctions

2020 ◽  
Vol 22 (26) ◽  
pp. 14773-14780 ◽  
Author(s):  
Zhi Yan ◽  
Ruiqiang Zhang ◽  
Xinlong Dong ◽  
Shifei Qi ◽  
Xiaohong Xu
Keyword(s):  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
Tunneling Magnetoresistance ◽  
Positive Bias ◽  
Filtering Effect ◽  
Spin Filtering

The transport properties of CrI3/h-BN/n·CrI3 (n = 1, 2, 3, 4) MTJs under positive bias voltages exhibit an interesting odd-even effect. Significant tunneling magnetoresistance, a perfect spin filtering effect and remarkable negative differential resistance were obtained.

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Perfect Spin Filtering Effect on Fe3GeTe2-Based Van der Waals Magnetic Tunnel Junctions

2020 ◽  
Vol 124 (50) ◽  
pp. 27429-27435
Author(s):  
Lishu Zhang ◽  
Tao Li ◽  
Jie Li ◽  
Yanyan Jiang ◽  
Jiaren Yuan ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering

Negative differential resistance, perfect spin-filtering effect and tunnel magnetoresistance in vanadium-doped zigzag blue phosphorus nanoribbons

2018 ◽  
Vol 20 (32) ◽  
pp. 21105-21112 ◽  
Author(s):  
Si-Cong Zhu ◽  
Shun-Jin Peng ◽  
Kai-Ming Wu ◽  
Cho-Tung Yip ◽  
Kai-Lun Yao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Magnetoresistance ◽  
Filtering Effect ◽  
Spin Filtering

We investigate the electronic and transport properties of vanadium-doped zigzag blue phosphorus nanoribbons by first-principles quantum transport calculations.

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Graphene Nanoribbons ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Spintronic Devices ◽  
Zigzag Graphene Nanoribbons ◽  
Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Light Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP3) monolayer tuned by electric and optical ways

2018 ◽  
Vol 20 (46) ◽  
pp. 29440-29445 ◽  
Author(s):  
Shenghui Zhang ◽  
Yiqun Xie ◽  
Yibin Hu ◽  
Xiaobin Niu ◽  
Yin Wang
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Two Dimensional ◽  
Electronic Transport Properties ◽  
Two Dimensional Materials ◽  
Spin Polarized ◽  
Spin Filtering

Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for spintronic nanodevices based on two-dimensional materials.

scholarly journals Strength of the symmetry spin-filtering effect in magnetic tunnel junctions

2016 ◽  
Vol 94 (17) ◽  
Author(s):  
Sergey V. Faleev ◽  
Oleg N. Mryasov ◽  
Stuart S. P. Parkin
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering
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