Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

Applied Physics Letters ◽

10.1063/1.2857501 ◽

2008 ◽

Vol 92 (7) ◽

pp. 073502 ◽

Author(s):

Sejoon Lee ◽

Kousuke Miyaji ◽

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Coulomb Blockade ◽

Room Temperature ◽

Differential Conductance ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596038 ◽

2006 ◽

Author(s):

M. Kobayashi ◽

K. Miyaji ◽

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Temperature Dependence ◽

Room Temperature ◽

Single Electron ◽

Differential Conductance ◽

Large Temperature ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6157 ◽

2006 ◽

Vol 45 (8A) ◽

pp. 6157-6161 ◽

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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Room-Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors

10.7567/ssdm.2004.h-2-3 ◽

2004 ◽

Author(s):

Masumi Saitoh ◽

Hidehiro Harata ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Low Voltage ◽

Differential Conductance ◽

Negative Differential Conductance ◽

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Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain

10.7567/ssdm.2005.g-2-2 ◽

2005 ◽

Author(s):

Kousuke Miyaji ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

High Voltage ◽

Room Temperature ◽

Differential Conductance ◽

Voltage Gain ◽

Negative Differential Conductance ◽

Single Hole ◽

High Voltage Gain

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Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.24 ◽

2007 ◽

Vol 46 (1) ◽

pp. 24-27 ◽

Author(s):

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Coulomb Blockade ◽

Room Temperature ◽

Single Electron ◽

Differential Conductance ◽

Single Electron Transistors ◽

Negative Differential Conductance ◽

Electron Transistors

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor

10.7567/ssdm.2005.g-2-1 ◽

2005 ◽

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors

10.7567/ssdm.2006.a-7-2 ◽

2006 ◽

Author(s):

Masaharu Kobayashi ◽

Kousuke Miyaji ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Differential Conductance ◽

Single Charge ◽

Negative Differential Conductance ◽

Temperature Operating

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Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

10.7567/ssdm.2002.f-2-5 ◽

2002 ◽

Author(s):

M. Saitoh ◽

H. Majima ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Barrier Structure ◽

Tunneling Barrier ◽

Single Hole ◽

Temperature Operating

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Room-temperature demonstration of low-voltage and tunable static memory based on negative differential conductance in silicon single-electron transistors

Applied Physics Letters ◽

10.1063/1.1839643 ◽

2004 ◽

Vol 85 (25) ◽

pp. 6233-6235 ◽

Author(s):

Masumi Saitoh ◽

Hidehiro Harata ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Low Voltage ◽

Single Electron ◽

Differential Conductance ◽

Single Electron Transistors ◽

Negative Differential Conductance ◽

Electron Transistors

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Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l640 ◽

2005 ◽

Vol 44 (No. 20) ◽

pp. L640-L642 ◽

Author(s):

Hidehiro Harata ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

High Voltage ◽

Coulomb Blockade ◽

Room Temperature ◽

Voltage Gain ◽

Single Hole ◽

High Voltage Gain

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