Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

Mapping Intimacies ◽

10.7567/ssdm.2002.f-2-5 ◽

2002 ◽

Author(s):

M. Saitoh ◽

H. Majima ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Barrier Structure ◽

Tunneling Barrier ◽

Single Hole ◽

Temperature Operating

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Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2426 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2426-2428 ◽

Cited By ~ 23

Author(s):

Masumi Saitoh ◽

Hideaki Majima ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Tunneling Barrier ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596038 ◽

2006 ◽

Author(s):

M. Kobayashi ◽

K. Miyaji ◽

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Temperature Dependence ◽

Room Temperature ◽

Single Electron ◽

Differential Conductance ◽

Large Temperature ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2002.807379 ◽

2002 ◽

Vol 1 (4) ◽

pp. 214-218 ◽

Cited By ~ 15

Author(s):

M. Saitoh ◽

T. Murakami ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Single Electron ◽

Tunneling Barrier ◽

Single Electron Transistors ◽

Temperature Operating ◽

Electron Transistors

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Fabrication and characterization of room temperature operating single electron transistors using focused ion beam technologies

10.37099/mtu.dc.etds/65 ◽

2008 ◽

Author(s):

Prasanjit Santosh Karre

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistors ◽

Temperature Operating ◽

Fabrication And Characterization ◽

Electron Transistors

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Focused Ion Beam Fabrication of Sub-20nm Inter-Electrode Gaps for Room Temperature Operating Single Electron Transistor

2008 8th IEEE Conference on Nanotechnology ◽

10.1109/nano.2008.17 ◽

2008 ◽

Author(s):

Manoranjan Acharya ◽

P. Santosh Kumar Karre ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Single Electron Transistor ◽

Temperature Operating

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6157 ◽

2006 ◽

Vol 45 (8A) ◽

pp. 6157-6161 ◽

Cited By ~ 4

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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High resistive tunnel junctions for the room temperature operating single electron transistors fabricated using chemical oxidation of tungsten nano particles

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144537 ◽

2011 ◽

Author(s):

P. Santosh Kumar Karre ◽

Daw Don Cheam ◽

Manoranjan Acharya ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Tunnel Junctions ◽

Chemical Oxidation ◽

Nano Particles ◽

Single Electron ◽

Single Electron Transistors ◽

Temperature Operating ◽

Electron Transistors

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Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

Applied Physics Letters ◽

10.1063/1.2857501 ◽

2008 ◽

Vol 92 (7) ◽

pp. 073502 ◽

Cited By ~ 19

Author(s):

Sejoon Lee ◽

Kousuke Miyaji ◽

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Coulomb Blockade ◽

Room Temperature ◽

Differential Conductance ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor

10.7567/ssdm.2005.g-2-1 ◽

2005 ◽

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit

Solid-State Electronics ◽

10.1016/j.sse.2013.04.015 ◽

2013 ◽

Vol 88 ◽

pp. 61-64 ◽

Cited By ~ 4

Author(s):

Motoki Nozue ◽

Ryota Suzuki ◽

Hirotoshi Nomura ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Charge Pump ◽

Floating Gate ◽

Single Electron ◽

Single Electron Transistor ◽

Temperature Operating ◽

Charge Pump Circuit

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