Low−temperature irradiation effects in SiO2−insulated MIS devices

1975 ◽  
Vol 46 (3) ◽  
pp. 1310-1317 ◽  
Author(s):  
E. Harari ◽  
S. Wang ◽  
B. S. H. Royce
Author(s):  
E. Feldbach ◽  
A. Kotlov ◽  
I. Kudryavtseva ◽  
P. Liblik ◽  
A. Lushchik ◽  
...  

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.


1977 ◽  
Vol 42 (3) ◽  
pp. 251-253 ◽  
Author(s):  
L. S. Topchyan ◽  
I. A. Naskidashvili ◽  
V. V. Ogorodnikov ◽  
V. V. Petrosyan ◽  
L. M. Murzin

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