Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3-5 μm

The admittance of test MIS devices based on nBn structures from Hg1-xCdxTe grown by molecular beam epitaxy (MBE) is investigated. The composition x in the absorbing layer was 0.29, and the composition in the barrier layer was 0.60. An equivalent circuit of a MIS device based on an nBn structure is proposed and the values of the elements of this circuit are found under various conditions. Comparison of the temperature dependence of the barrier resistance with the Rule07 model indicates the possibility of creating efficient nBn detectors based on MBE HgCdTe for the spectral range of 3–5 μm.

Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications

Diamond-like carbon (DLC) has been studied as a dielectric material for future metal–insulator–semiconductor (MIS) technology. In this paper, ultrathin DLC films were deposited on silicon substrates by using the dc magnetron sputtering technique at various deposition voltages. The current–voltage characteristics indicated that the leakage currents of the MIS devices decreased with an increase in deposition voltages, and that a low leakage current ([Formula: see text] A/cm2) was achieved at −2 V bias voltage. The deposition voltage effects on the structures of films were investigated through Raman spectroscopy, which indicated that the sp3 bonding fraction decreased with an increase in the deposition voltage. The ramp-voltage breakdown test revealed high effective breakdown electric field ([Formula: see text]85 MV/cm) for the MIS device with the DLC film deposited at 1100-V deposition. Stress-induced leakage current measurement indicated that the DLC film exhibited excellent reliability.