Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering

2010 ◽  
Vol 108 (4) ◽  
pp. 043519 ◽  
Author(s):  
D. Abdelbarey ◽  
V. Kveder ◽  
W. Schröter ◽  
M. Seibt
Keyword(s):  
Point Defect ◽  
Crystalline Silicon ◽  
Defect Reactions

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls

2019 ◽  
Vol 30 (32) ◽  
pp. 324002
Author(s):  
Adrian Díaz Álvarez ◽  
Nemanja Peric ◽  
Nathali Alexandra Franchina Vergel ◽  
Jean-Philippe Nys ◽  
Maxime Berthe ◽  
...  
Keyword(s):  
Point Defect ◽  
Atomic Scale ◽  
Defect Reactions ◽  
Scale Roughness

Energy barriers for point-defect reactions in3C-SiC

2013 ◽  
Vol 88 (5) ◽  
Author(s):  
Ming-Jie Zheng ◽  
Narasimhan Swaminathan ◽  
Dane Morgan ◽  
Izabela Szlufarska
Keyword(s):  
Point Defect ◽  
Energy Barriers ◽  
Defect Reactions

Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

1995 ◽  
Vol 389 ◽  
Author(s):  
H. U. Jäger
Keyword(s):  
Point Defect ◽  
Anomalous Diffusion ◽  
Crystalline Silicon ◽  
Electrical Activation ◽  
Transient Diffusion ◽  
Model Predictions ◽  
Post Implantation

ABSTRACTA point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.

Hydrogen Enhanced Defect Reactions in Silicon: Interstitial Atom - Vacancy

1998 ◽  
Vol 510 ◽  
Author(s):  
A.N. Nazarov ◽  
V.M. Pinchuk ◽  
T.V. Yanchuk ◽  
V.S. Lysenko
Keyword(s):  
Quantum Chemical ◽  
Energy Barrier ◽  
Interstitial Atom ◽  
Crystalline Silicon ◽  
Crystalline Lattice ◽  
Considerable Decrease ◽  
Potential Barriers ◽  
Transport Direction ◽  
Defect Reactions ◽  
Vacancy Site

AbstractIn the paper the model of interaction of the hydrogenated vacancy with silicon interstitial and different dopants (B, P and As) in crystalline silicon is considered. Quantum chemical calculations using the SCF MO LCAO technique in the NDDO valence approach show that the hydrogenation of the vacancy leads to the considerable decrease of the energy barrier height for the interstitial atom incorporation into the vacancy site of the crystalline lattice. The potential barriers for incorporation of the interstitial into the site and for leaving the atoms from the site have been calculated as a function of hydrogen localization in the vicinity of the vacancy (inside and outside of the vacancy), the charge state of hydrogen localized outside the vacancy (HO, H+ and H-) and the transport direction (<111>, <110> and <100>) of the atoms both to the vacancy and out from it. The theory is compared with the reported experimental results.

Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.

1987 ◽  
Vol 92 ◽  
Author(s):  
M. Levinson ◽  
C. A. Armiento ◽  
S. S. P. Shah
Keyword(s):  
Point Defect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Deep Level ◽  
Dopant Activation ◽  
Defect Reactions ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Dlts Spectra

ABSTRACTThe point defect reactions in GaAs by which ion implant damage is removed and implanted dopants are activated remain poorly understood. Deep level capacitance transient spectroscopy (DLTS) has been used to study the effects of rapid thermal annealing (RTA) on Si-implant damage generated defects. In low implant dose samples, the results of RTA are similar to those of furnace anneals and also agree well with previous reports of boron-implanted and neutron-irradiated material. In contrast to this, higher dose samples showed much smaller than expected apparent defect concentrations. After RTA, very broad DLTS spectra and relatively little EL2 or EL3 defect formation was observed. The significance of these results with regard to the mechanisms of dopant activation and damage removal are discussed.

Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs

1997 ◽  
Vol 82 (11) ◽  
pp. 5348-5351 ◽  
Author(s):  
A. Gaber ◽  
H. Zillgen ◽  
P. Ehrhart ◽  
P. Partyka ◽  
R. S. Averback
Keyword(s):  
Low Temperature ◽  
Point Defect ◽  
Lattice Parameter ◽  
Temperature Electron ◽  
Defect Reactions

Point defect populations in amorphous and crystalline silicon

1990 ◽  
Vol 75 (3) ◽  
pp. 197-200 ◽  
Author(s):  
S. Roorda ◽  
J.M. Poate ◽  
D.C. Jacobson ◽  
D.J. Eaglesham ◽  
B.S. Dennis ◽  
...  
Keyword(s):  
Point Defect ◽  
Crystalline Silicon
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