Step-graded AlGaN vs superlattice: Role of strain relief layer in dynamic on-resistance degradation

In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (Ron) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic Ron. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic Ron degradation.

Ab initio mechanism revealing for tricalcium silicate dissolution

Dissolution of mineral in water is ubiquitous in nature and industry, especially for the calcium silicate species. However, the behavior of such a complex chemical reaction is still unclear at atomic level. Here, we show that the ab initio molecular dynamics and metadynamics simulations enable quantitative analyses of reaction pathways, and the thermodynamics and kinetics of calcium ion dissolution from the tricalcium silicate (Ca3SiO5) surface. The calcium sites with different coordination environment leads to different reaction pathways and free energy barriers. The low free energy barriers lead to that the detachment of calcium ions is a ligand exchange and auto-catalytic process. Moreover, the water adsorption, proton exchange and diffusion of water into the surface layer accelerate the leaching of calcium ions from the surface step by step. The discovery in this work thus would be a landmark for revealing the mechanism of cement hydration.