Non-linear injection level dependence of the excess carrier lifetime of p-type GaSb thin films: A two-layer model

2012 ◽  
Vol 111 (11) ◽  
pp. 113104 ◽  
Author(s):  
M. W. Shura ◽  
V. Wagener ◽  
J. R. Botha ◽  
M. C. Wagener
Keyword(s):  
Thin Films ◽  
Carrier Lifetime ◽  
Injection Level ◽  
Layer Model ◽  
Excess Carrier ◽  
Non Linear ◽  
Two Layer Model ◽  
P Type

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

2007 ◽  
Vol 46 (8A) ◽  
pp. 5057-5061 ◽  
Author(s):  
Masashi Kato ◽  
Masahiko Kawai ◽  
Tatsuhiro Mori ◽  
Masaya Ichimura ◽  
Shingo Sumie ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Excess Carrier ◽  
Photoconductivity Decay ◽  
P Type ◽  
Sic Wafer

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 199-202 ◽  
Author(s):  
Toshihiko Hayashi ◽  
Katsunori Asano ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Carrier Lifetime ◽  
Injection Level ◽  
Continuous Increase ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Injection Condition ◽  
P Type ◽  
Very High

Temperature and injection level dependencies of carrier lifetimes in p-type and n-type 4H-SiC epilayers have been investigated. The carrier lifetimes have been measured by differential microwave photoconductance decay measurements at various injection levels and temperatures. In both p-type and n-type epilayers, the carrier lifetimes gradually increased with increasing the injection level except for the very high injection condition. And the carrier lifetimes exhibited continuous increase with elevating the temperature for both epilayers. The carrier lifetime reached 3.3 µs in p-type and 4.2 µs in n-type epilayers at 250°C and an injection level of 1.8x1016 cm-3.

Two layer model for photothermal radiometry applied on semiconducting thin films

1997 ◽  
Vol 82 (12) ◽  
pp. 6220-6227 ◽  
Author(s):  
M. Nestoros ◽  
Y. Karmiotis ◽  
C. Christofides
Keyword(s):  
Thin Films ◽  
Photothermal Radiometry ◽  
Layer Model ◽  
Two Layer Model ◽  
Semiconducting Thin Films

Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

2012 ◽  
Vol 51 (2R) ◽  
pp. 028006 ◽  
Author(s):  
Masashi Kato ◽  
Yoshinori Matsushita ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Carrier Lifetime ◽  
Low Energy ◽  
Energy Electron ◽  
Excess Carrier ◽  
Low Energy Electron ◽  
P Type

scholarly journals Surface Layers and Thermoelectric Properties of Vapor-Phase Condensation LAST Pb18Ag2-xSbxTe20 on Mica

2015 ◽  
Vol 16 (1) ◽  
pp. 93-97
Author(s):  
D. M. Freik ◽  
B. S. Dzundza ◽  
O. B. Kostyuk ◽  
V. I. Makovyshyn ◽  
R. S. Yavorskiy
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Vapor Phase ◽  
High Vacuum ◽  
Layer Model ◽  
Electrical Parameters ◽  
Surface Layers ◽  
Mica Substrate ◽  
Two Layer Model

The thermoelectric properties of thin films Pb18Ag2-xSbxTe20, obtained by condensation of vapor on the high vacuum on mica substrate are researched. Based on a two-layer model Petrits are founded electrical parameters of surface layers. It is shown that condensates thickness d <1 micron are characterized by improved thermoelectric properties.

Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements

2009 ◽  
Vol 105 (5) ◽  
pp. 053714 ◽  
Author(s):  
Philipp Rosenits ◽  
Thomas Roth ◽  
Wilhelm Warta ◽  
Stefan Reber ◽  
Stefan W. Glunz
Keyword(s):  
Thin Films ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Excess Carrier ◽  
Silicon Thin Films

A two-layer model for the superconductivity of amorphous ultra-thin films

1976 ◽  
Vol 34 (2) ◽  
pp. 259-262 ◽  
Author(s):  
C.G. Granqvist ◽  
T. Claeson
Keyword(s):  
Thin Films ◽  
Layer Model ◽  
Two Layer Model
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