Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 199-202 ◽  
Author(s):  
Toshihiko Hayashi ◽  
Katsunori Asano ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Carrier Lifetime ◽  
Injection Level ◽  
Continuous Increase ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Injection Condition ◽  
P Type ◽  
Very High

Temperature and injection level dependencies of carrier lifetimes in p-type and n-type 4H-SiC epilayers have been investigated. The carrier lifetimes have been measured by differential microwave photoconductance decay measurements at various injection levels and temperatures. In both p-type and n-type epilayers, the carrier lifetimes gradually increased with increasing the injection level except for the very high injection condition. And the carrier lifetimes exhibited continuous increase with elevating the temperature for both epilayers. The carrier lifetime reached 3.3 µs in p-type and 4.2 µs in n-type epilayers at 250°C and an injection level of 1.8x1016 cm-3.

scholarly journals Unified model for p-n junction current-voltage characteristics

2011 ◽  
Vol 1 (1) ◽  
Author(s):  
Miron Cristea
Keyword(s):  
Carrier Lifetime ◽  
Parameter Extraction ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Basic Parameters ◽  
Current Voltage Characteristics ◽  
High Level ◽  
Charge Carrier Lifetime

AbstractCurrent-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.

Non-linear injection level dependence of the excess carrier lifetime of p-type GaSb thin films: A two-layer model

2012 ◽  
Vol 111 (11) ◽  
pp. 113104 ◽  
Author(s):  
M. W. Shura ◽  
V. Wagener ◽  
J. R. Botha ◽  
M. C. Wagener
Keyword(s):  
Thin Films ◽  
Carrier Lifetime ◽  
Injection Level ◽  
Layer Model ◽  
Excess Carrier ◽  
Non Linear ◽  
Two Layer Model ◽  
P Type

Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 315-318
Author(s):  
Jian Wu Sun ◽  
Satoshi Kamiyama ◽  
Peter J. Wellmann ◽  
Rickard Liljedahl ◽  
R. Yakimova ◽  
...  
Keyword(s):  
High Resolution ◽  
Carrier Lifetime ◽  
Crystal Quality ◽  
Injection Level ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Carrier Lifetimes ◽  
Photoconductivity Decay

High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 μs under the injection level of 3.5×1012 cm-2, which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality.

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 197-200 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
Hidekazu Tsuchida
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Constant ◽  
Minority Carrier Lifetime ◽  
Bulk Carrier ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Time Resolved Photoluminescence ◽  
Annealing Method

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC

2014 ◽  
Vol 778-780 ◽  
pp. 503-506 ◽  
Author(s):  
Keiko Miyake ◽  
Tomonari Yasuda ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Carrier Lifetime ◽  
Hydrogen Generation ◽  
Hydrogen Energy ◽  
Energy Technology ◽  
Next Generation ◽  
Carrier Lifetimes ◽  
P Type ◽  
Selection Of

The photolytic hydrogen generation using sunlight attracts attention as a next generation energy technology. A key of this technology is a selection of materials for the photolysis and SiC is one of the candidate materials for this application. The conversion efficiency from the solar to the hydrogen energy would be affected by the carrier lifetime in SiC. Therefore, in this study, we measured carrier lifetimes in SiC and compared them with photocurrents in electrolytes that is directly correlated to the conversion efficiency.

High injection effects on conductivity and carrier lifetime in P-type silicon material

1980 ◽  
Vol 15 (5) ◽  
pp. 945-959 ◽  
Author(s):  
D. Bielle-Daspet ◽  
F. Espioussas ◽  
A. Johan ◽  
M. Roux
Keyword(s):  
Carrier Lifetime ◽  
Silicon Material ◽  
Type Silicon ◽  
High Injection ◽  
P Type

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

2010 ◽  
Vol 645-648 ◽  
pp. 207-210 ◽  
Author(s):  
Yoshinori Matsushita ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Cross Sections ◽  
Carrier Lifetime ◽  
Excitation Density ◽  
Excess Carrier ◽  
Carrier Lifetimes ◽  
Photoconductivity Decay ◽  
Recombination Centers ◽  
P Type ◽  
Capture Cross Sections

We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave photoconductivity decay (-PCD) method. The carrier lifetime becomes longer with excitation density for the as-grown epilayer. This dependence suggests that e ≥h for the dominant recombination center, where e andh are capture cross sections for electrons and holes, respectively. In contrast, the carrier lifetime does not depend on the excitation density for the sample irradiated with electrons at an energy of 160 keV and a dose of 1×1017 cm-2. This may be due to the fact that recombination centers with e <<h were introduced by the electron irradiation or due to the fact that the acceptor concentration was decreased significantly by the irradiation.

The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 139-146 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster ◽  
Karsten Bothe ◽  
Bianca Lim ◽  
Jan Schmidt
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Hole Concentration ◽  
Energy Levels ◽  
Minority Carrier Lifetime ◽  
Injection Level ◽  
Czochralski Silicon ◽  
P Type ◽  
Co Doped ◽  
Fast Stage

Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges is found to be identical to the fast-stage centre (FRC) known for p-Si where it is produced at a rate proportional to the squared hole concentration, p2. Since holes in n-Si are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear, due to the dependence of p on the concentration of FRC and this non-linearity is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (-1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. The proper identification of FRC is a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO2 – a complex involving an interstitial boron.

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