Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

2012 ◽  
Vol 101 (25) ◽  
pp. 251906 ◽  
Author(s):  
C. Cornet ◽  
T. Nguyen Thanh ◽  
T. Quinci ◽  
S. Almosni ◽  
T. Rohel ◽  
...  
Keyword(s):  
Atomic Step ◽  
Nitride Alloys ◽  
Preferential Incorporation ◽  
Step Edges

Direct observation of atomic step edges on the rutile TiO2(110)-(1 × 1) surface using atomic force microscopy

2018 ◽  
Vol 20 (44) ◽  
pp. 28331-28337 ◽  
Author(s):  
Huan Fei Wen ◽  
Masato Miyazaki ◽  
Quanzhen Zhang ◽  
Yuuki Adachi ◽  
Yan Jun Li ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Direct Observation ◽  
Atomic Step ◽  
Atomic Configuration ◽  
Rutile Tio2 ◽  
Force Microscopy ◽  
Atomic Force ◽  
Step Edges

Clarifying the atomic configuration of step edges on a rutile TiO2 surface is crucial for understanding its fundamental reactivity, and the direct observation of atomic step edges is still a challenge.

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JE02 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Marta Sawicka ◽  
Zbig R. Wasilewski ◽  
Sylwester Porowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Step ◽  
Step Edges

Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation

2004 ◽  
Vol 832 ◽  
Author(s):  
Shunji Yoshida ◽  
Takeharu Sekiguchi ◽  
Kohei M. Itoh
Keyword(s):  
Step Edge ◽  
Atomic Step ◽  
Current Direction ◽  
Edge Region ◽  
Atomic Configuration ◽  
Nanostructure Formation ◽  
Experimental Discovery ◽  
Dc Current ◽  
Step Edges

ABSTRACTWe report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [112] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [112] towards [110] [110], dc current flowing in the direction [110] [110] climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [110] [110]direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

2013 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Marta Sawiska ◽  
Zbig R. Wasilewski ◽  
Sylwester Porowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Step ◽  
Step Edges

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

2013 ◽  
Vol 367 ◽  
pp. 115-121 ◽  
Author(s):  
H. Turski ◽  
M. Siekacz ◽  
Z.R. Wasilewski ◽  
M. Sawicka ◽  
S. Porowski ◽  
...  
Keyword(s):  
Atomic Step ◽  
Step Edges

scholarly journals Temperature effects on the nano-friction across exposed atomic step edges

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085322
Author(s):  
Wen Wang ◽  
Ashu Wang ◽  
Lingyan Zeng
Keyword(s):  
Temperature Effects ◽  
Atomic Step ◽  
Step Edges

The Effect of Substrate Misorientation on the Evolution of Surface Morphology in Epitaxially Grown CaF2/Si(111) Heterostructures

1995 ◽  
Vol 399 ◽  
Author(s):  
B. M. Kim ◽  
S. R. Soss ◽  
R. M. Overney ◽  
L. J. Schowalter
Keyword(s):  
Surface Morphology ◽  
High Energy ◽  
Ex Situ ◽  
Atomic Step ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Miscut Angle ◽  
Step Edges

ABSTRACTWe have studied the effect of substrate misorientation on the evolution of surface morphology in lattice-mismatched heterostructures for molecular beam epitaxial growth of a thin insulator (CaF2) on vicinal Si(111) surfaces with in-situ reflection high energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). At a substrate temperature of 770 °C, CaF2 growth is initiated by the formation of a reacted CaF layer followed by the complete overgrowth of an additional CaF2 monolayer (ml). However, CaF2 growth beyond these two ml depends on the degree of miscut of the Si substrate. On Si substrates tilted toward the [112] by a miscut angle ≥ 0.5°, the atomic step edges on the Si surface bunch together forming flat terraces that are ∼200 nm wide. In this case, the CaF2 growth beyond 2 ml proceeds by the nucleation and lateral propagation of thick CaF2 islands (whose height is determined by the step bunches) along the bunched step edges to eventually form a complete overlayer. For CaF2 films grown on substrates with a miscut angle < 0.5°, the CaF2 layer remains relatively uniform without the formation of thick islands. With further deposition, evidence for a dense network of misfit dislocations is observed on the surface of the CaF2 film.

Multislice calculations of RHEED patterns from vicinal Si (001)

1993 ◽  
Vol 51 ◽  
pp. 1000-1001
Author(s):  
Scott Lordi
Keyword(s):  
Misorientation Angle ◽  
Incident Angle ◽  
Incident Beam ◽  
Experimental Results ◽  
Bragg Condition ◽  
Vicinal Surfaces ◽  
Kinematic Theory ◽  
Step Edges

Vicinal Si (001) surfaces are interesting because they are good substrates for the growth of III-V semiconductors. Spots in RHEED patterns from vicinal surfaces are split due to scattering from ordered step arrays and this splitting can be used to determine the misorientation angle, using kinematic arguments. Kinematic theory is generally regarded to be inadequate for the calculation of RHEED intensities; however, only a few dynamical RHEED simulations have been attempted for vicinal surfaces. The multislice formulation of Cowley and Moodie with a recently developed edge patching method was used to calculate RHEED patterns from vicinal Si (001) surfaces. The calculated patterns are qualitatively similar to published experimental results and the positions of the split spots quantitatively agree with kinematic calculations.RHEED patterns were calculated for unreconstructed (bulk terminated) Si (001) surfaces misoriented towards [110] ,with an energy of 15 keV, at an incident angle of 36.63 mrad ([004] bragg condition), and a beam azimuth of [110] (perpendicular to the step edges) and the incident beam pointed down the step staircase.

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