scholarly journals Temperature effects on the nano-friction across exposed atomic step edges

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085322
Author(s):  
Wen Wang ◽  
Ashu Wang ◽  
Lingyan Zeng
Keyword(s):  
Temperature Effects ◽  
Atomic Step ◽  
Step Edges

Direct observation of atomic step edges on the rutile TiO2(110)-(1 × 1) surface using atomic force microscopy

2018 ◽  
Vol 20 (44) ◽  
pp. 28331-28337 ◽  
Author(s):  
Huan Fei Wen ◽  
Masato Miyazaki ◽  
Quanzhen Zhang ◽  
Yuuki Adachi ◽  
Yan Jun Li ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Direct Observation ◽  
Atomic Step ◽  
Atomic Configuration ◽  
Rutile Tio2 ◽  
Force Microscopy ◽  
Atomic Force ◽  
Step Edges

Clarifying the atomic configuration of step edges on a rutile TiO2 surface is crucial for understanding its fundamental reactivity, and the direct observation of atomic step edges is still a challenge.

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JE02 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Marta Sawicka ◽  
Zbig R. Wasilewski ◽  
Sylwester Porowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Step ◽  
Step Edges

Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

2012 ◽  
Vol 101 (25) ◽  
pp. 251906 ◽  
Author(s):  
C. Cornet ◽  
T. Nguyen Thanh ◽  
T. Quinci ◽  
S. Almosni ◽  
T. Rohel ◽  
...  
Keyword(s):  
Atomic Step ◽  
Nitride Alloys ◽  
Preferential Incorporation ◽  
Step Edges

Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation

2004 ◽  
Vol 832 ◽  
Author(s):  
Shunji Yoshida ◽  
Takeharu Sekiguchi ◽  
Kohei M. Itoh
Keyword(s):  
Step Edge ◽  
Atomic Step ◽  
Current Direction ◽  
Edge Region ◽  
Atomic Configuration ◽  
Nanostructure Formation ◽  
Experimental Discovery ◽  
Dc Current ◽  
Step Edges

ABSTRACTWe report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [112] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [112] towards [110] [110], dc current flowing in the direction [110] [110] climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [110] [110]direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

2013 ◽  
Author(s):  
Henryk Turski ◽  
Marcin Siekacz ◽  
Marta Sawiska ◽  
Zbig R. Wasilewski ◽  
Sylwester Porowski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Step ◽  
Step Edges

Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers

2013 ◽  
Vol 367 ◽  
pp. 115-121 ◽  
Author(s):  
H. Turski ◽  
M. Siekacz ◽  
Z.R. Wasilewski ◽  
M. Sawicka ◽  
S. Porowski ◽  
...  
Keyword(s):  
Atomic Step ◽  
Step Edges

The Effect of Substrate Misorientation on the Evolution of Surface Morphology in Epitaxially Grown CaF2/Si(111) Heterostructures

1995 ◽  
Vol 399 ◽  
Author(s):  
B. M. Kim ◽  
S. R. Soss ◽  
R. M. Overney ◽  
L. J. Schowalter
Keyword(s):  
Surface Morphology ◽  
High Energy ◽  
Ex Situ ◽  
Atomic Step ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth ◽  
Miscut Angle ◽  
Step Edges

ABSTRACTWe have studied the effect of substrate misorientation on the evolution of surface morphology in lattice-mismatched heterostructures for molecular beam epitaxial growth of a thin insulator (CaF2) on vicinal Si(111) surfaces with in-situ reflection high energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). At a substrate temperature of 770 °C, CaF2 growth is initiated by the formation of a reacted CaF layer followed by the complete overgrowth of an additional CaF2 monolayer (ml). However, CaF2 growth beyond these two ml depends on the degree of miscut of the Si substrate. On Si substrates tilted toward the [112] by a miscut angle ≥ 0.5°, the atomic step edges on the Si surface bunch together forming flat terraces that are ∼200 nm wide. In this case, the CaF2 growth beyond 2 ml proceeds by the nucleation and lateral propagation of thick CaF2 islands (whose height is determined by the step bunches) along the bunched step edges to eventually form a complete overlayer. For CaF2 films grown on substrates with a miscut angle < 0.5°, the CaF2 layer remains relatively uniform without the formation of thick islands. With further deposition, evidence for a dense network of misfit dislocations is observed on the surface of the CaF2 film.

Characterization of carbides in M50NiL

1991 ◽  
Vol 49 ◽  
pp. 606-607
Author(s):  
L. S. Lin ◽  
K. P. Gumz ◽  
A. V. Karg ◽  
C. C. Law
Keyword(s):  
Temperature Effects ◽  
Base Composition ◽  
Lattice Parameter ◽  
Control Surface ◽  
Carbide Formation ◽  
Particle Sizes ◽  
Low Carbon ◽  
Fee Structure ◽  
Heat Treated

Carbon and temperature effects on carbide formation in the carburized zone of M50NiL are of great importance because they can be used to control surface properties of bearings. A series of homogeneous alloys (with M50NiL as base composition) containing various levels of carbon in the range of 0.15% to 1.5% (in wt.%) and heat treated at temperatures between 650°C to 1100°C were selected for characterizations. Eleven samples were chosen for carbide characterization and chemical analysis and their identifications are listed in Table 1.Five different carbides consisting of M6C, M2C, M7C3 and M23C6 were found in all eleven samples examined as shown in Table 1. M6C carbides (with least carbon) were found to be the major carbide in low carbon alloys (<0.3% C) and their amounts decreased as the carbon content increased. In sample C (0.3% C), most particles (95%) encountered were M6C carbide with a particle sizes range between 0.05 to 0.25 um. The M6C carbide are enriched in both Mo and Fe and have a fee structure with lattice parameter a=1.105 nm (Figure 1).

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