scholarly journals Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

2013 ◽  
Vol 102 (19) ◽  
pp. 192904 ◽  
Author(s):  
S. P. Pavunny ◽  
P. Misra ◽  
R. Thomas ◽  
A. Kumar ◽  
J. Schubert ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
High K ◽  
High K Gate Dielectric

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K

Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

2019 ◽  
Vol 1 (5) ◽  
pp. 33-40
Author(s):  
Rajat Mahapatra ◽  
Nipapan Poolamai ◽  
Nick Wright ◽  
Amit K. Chakraborty ◽  
Karl S. Coleman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Gate Dielectric
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