Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

2013 ◽  
Vol 114 (23) ◽  
pp. 234503 ◽  
Author(s):  
Y. Li ◽  
Y. P. Zhong ◽  
Y. F. Deng ◽  
Y. X. Zhou ◽  
L. Xu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Logic Gates ◽  
Boolean Logic ◽  
Change Memory ◽  
Boolean Logic Gates

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

2016 ◽  
Vol 109 (2) ◽  
pp. 023506 ◽  
Author(s):  
Bin Lu ◽  
Xiaomin Cheng ◽  
Jinlong Feng ◽  
Xiawei Guan ◽  
Xiangshui Miao
Keyword(s):  
Magnetic Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Logic Gates ◽  
Super Lattice ◽  
Change Memory

scholarly journals Crossbar-Compatible Stateful Logic Using Phase Change Memory

2021 ◽  
Author(s):  
Barak Hoffer ◽  
Nicolás Wainstein ◽  
Christopher M. Neumann ◽  
Eric Pop ◽  
Eilam Yalon ◽  
...  
Keyword(s):  
Phase Change ◽  
Logic Gate ◽  
Phase Change Memory ◽  
Logic Gates ◽  
Digital Processing ◽  
Memory Systems ◽  
Logic Function ◽  
Von Neumann ◽  
Memory Bottleneck ◽  
Change Memory

Abstract Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with von Neumann architectures. In stateful logic, memory cells are used to perform the logic operations without reading or moving any data outside the memory array. This has been previously demonstrated using several resistive memory types, but not with commercially available phase-change memory (PCM). Here we present the first implementation of stateful logic using PCM. We experimentally demonstrate four logic gate types (NOR, IMPLY, OR, NIMP) using commonly used PCM materials and crossbar-compatible structures. Our stateful logic gates form a functionally complete set, which enables sequential execution of any logic function within the memory and paves the way to PCM-based digital processing-in-memory systems.

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

Revisiting Hash Table Design for Phase Change Memory

2016 ◽  
Vol 49 (2) ◽  
pp. 18-26 ◽  
Author(s):  
Biplob Debnath ◽  
Alireza Haghdoost ◽  
Asim Kadav ◽  
Mohammed G. Khatib ◽  
Cristian Ungureanu
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Hash Table ◽  
Change Memory
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