Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

2018 ◽  
Vol 123 (16) ◽  
pp. 161503 ◽  
Author(s):  
S. Wang ◽  
V. Mirkhani ◽  
K. Yapabandara ◽  
R. Cheng ◽  
G. Hernandez ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Electrical Characteristics ◽  
Annealing Temperatures

On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO

2019 ◽  
Vol 672 ◽  
pp. 152-156 ◽  
Author(s):  
Vahid Mirkhani ◽  
Kosala Yapabandara ◽  
Shiqiang Wang ◽  
Min Prasad Khanal ◽  
Sunil Uprety ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Electrical Characteristics

scholarly journals Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1652
Author(s):  
Do-Kyung Kim ◽  
Jihwan Park ◽  
Xue Zhang ◽  
Jaehoon Park ◽  
Jin-Hyuk Bae
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Numerical Study ◽  
Physical Factors ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
Current Ratio ◽  
Trap Assisted Tunneling ◽  
Voltage Saturation

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the sub-gap DOS parameters such as tail acceptor-like states, tail donor-like states, Gauss acceptor-like states, and Gauss donor-like states in amorphous IGZO TFTs. We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. Consequently, the principal electrical parameters, such as the threshold voltage, saturation mobility, sub-threshold swing, and on-off current ratio, are effectively tuned by controlling sub-gap DOS distribution in a-IGZO TFTs.

Density-of-states in pentacene from the electrical characteristics of thin-film transistors

2010 ◽  
Vol 11 (8) ◽  
pp. 1333-1337 ◽  
Author(s):  
J. Puigdollers ◽  
A. Marsal ◽  
S. Cheylan ◽  
C. Voz ◽  
R. Alcubilla
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Electrical Characteristics

scholarly journals Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

Membranes ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 758
Author(s):  
Tsung-Kuei Kang ◽  
Yu-Yu Lin ◽  
Han-Wen Liu ◽  
Che-Li Lin ◽  
Po-Jui Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Potential Candidate ◽  
Electrical Characteristics ◽  
Si Nanowires ◽  
Major Mechanism ◽  
Wide Range ◽  
External Connection

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors

2019 ◽  
Vol 40 (1) ◽  
pp. 40-43 ◽  
Author(s):  
Jun Tae Jang ◽  
Hara Kang ◽  
Hye Ri Yu ◽  
Eok Su Kim ◽  
Kyoung Seok Son ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Anion Composition

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

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