scholarly journals Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistors

2016 ◽  
Vol 29 (9) ◽  
pp. 527-531
Author(s):  
Jaewon Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Electrical Characteristics ◽  
Aging Effects

On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO

2019 ◽  
Vol 672 ◽  
pp. 152-156 ◽  
Author(s):  
Vahid Mirkhani ◽  
Kosala Yapabandara ◽  
Shiqiang Wang ◽  
Min Prasad Khanal ◽  
Sunil Uprety ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Electrical Characteristics

scholarly journals Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

Membranes ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 758
Author(s):  
Tsung-Kuei Kang ◽  
Yu-Yu Lin ◽  
Han-Wen Liu ◽  
Che-Li Lin ◽  
Po-Jui Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Potential Candidate ◽  
Electrical Characteristics ◽  
Si Nanowires ◽  
Major Mechanism ◽  
Wide Range ◽  
External Connection

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Pentacene thin-film transistors with sol–gel derived amorphous Ba0.6Sr0.4TiO3 gate dielectric

2008 ◽  
Vol 85 (2) ◽  
pp. 414-418 ◽  
Author(s):  
Wei Wang ◽  
Guifang Dong ◽  
Liduo Wang ◽  
Yong Qiu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

scholarly journals Sol–Gel PMMA–ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

ACS Omega ◽  
2017 ◽  
Vol 2 (10) ◽  
pp. 6968-6974 ◽  
Author(s):  
Clemente G. Alvarado-Beltrán ◽  
Jorge L. Almaral-Sánchez ◽  
Israel Mejia ◽  
Manuel A. Quevedo-López ◽  
Rafael Ramirez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Hybrid Layers
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