Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

2017 ◽  
Vol 122 (24) ◽  
pp. 245302 ◽  
Author(s):  
Yunlong Li ◽  
Samuel Suhard ◽  
Stefaan Van Huylenbroeck ◽  
Johan Meersschaut ◽  
Els Van Besien ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Through Silicon Via ◽  
Voltage Shift ◽  
Interface Charge ◽  
Layer Deposition ◽  
Flatband Voltage

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

scholarly journals Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075021 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Layer Deposition ◽  
Negative Charge ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Al2o3 Films ◽  
Trapping Effects

Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications

2014 ◽  
Vol 556 ◽  
pp. 560-565 ◽  
Author(s):  
Kyeong-Keun Choi ◽  
Jong Kee ◽  
Si-Hong Kim ◽  
Myung-Soo Park ◽  
Chan-Gyung Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Through Silicon Via ◽  
Layer Deposition ◽  
Al2o3 Films

scholarly journals Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Peng Zhou ◽  
Li Ye ◽  
Qing Qing Sun ◽  
Peng Fei Wang ◽  
An Quan Jiang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Joule Heat ◽  
Layer Deposition
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