Low-temperature photoluminescence of C60 single crystals intercaled with nitrogen molecules in the wide range of temperatures

2021 ◽  
Vol 47 (2) ◽  
pp. 173-175
Author(s):  
P. V. Zinoviev ◽  
V. N. Zoryansky
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Wide Range ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence analysis of the γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals

2013 ◽  
Vol 144 ◽  
pp. 112-116 ◽  
Author(s):  
Iu. Nasieka ◽  
L. Rashkovetskyi ◽  
M. Boyko ◽  
V. Strelchuk ◽  
Z. Tsybrii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Defect Structure ◽  
Irradiation Effect ◽  
Γ Irradiation ◽  
Low Temperature Photoluminescence

scholarly journals Low-Temperature Photoluminescence Spectroscopy of Solvent-Free PCBM Single-Crystals

2015 ◽  
Vol 119 (21) ◽  
pp. 11846-11851 ◽  
Author(s):  
Giulia Tregnago ◽  
Michael Wykes ◽  
Giuseppe M. Paternò ◽  
David Beljonne ◽  
Franco Cacialli
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Photoluminescence Spectroscopy ◽  
Solvent Free ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence in AgGaSe2 single crystals

2004 ◽  
Vol 49 (3) ◽  
pp. 335-337 ◽  
Author(s):  
I. V. Bodnar’ ◽  
M. V. Yakushev
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Low Temperature Photoluminescence

Equilibrium characteristics and low-temperature photoluminescence of CdTe:Pb single crystals

2004 ◽  
Vol 38 (5) ◽  
pp. 499-504 ◽  
Author(s):  
A. V. Savitsky ◽  
O. A. Parfenyuk ◽  
M. I. Ilashchuk ◽  
A. I. Savchuk ◽  
S. N. Chupyra
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Low Temperature Photoluminescence

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

2011 ◽  
Vol 679-680 ◽  
pp. 173-176
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Annealing Behaviour ◽  
Wide Range ◽  
Nitrogen Concentrations ◽  
P Type ◽  
Different Sources ◽  
Low Temperature Photoluminescence

In the course of studying by low temperature photoluminescence spectroscopy a wide range of electron-irradiated samples of p(Al)-type epitaxial layers of 4H SiC, from a variety of different sources of supply, the results were found to fit into two very different categories. The origin of these differences has been explored using a wide range of experimental techniques and found to result from the degree of compensation of the aluminium by nitrogen in the layers. Nitrogen concentrations deduced by SIMS experiments on these materials were found to be unreliable. The two different categories of material, called V and AB here, showed marked differences in their subsequent annealing behaviour and the implications of this distinction are discussed.

Sign in / Sign up

Export Citation Format

Share Document