Defect characterization by differential capacitance spectroscopy without the Arrhenius plot

2021 ◽  
Vol 92 (4) ◽  
pp. 043903
Author(s):  
Jian V. Li
Keyword(s):  
Arrhenius Plot ◽  
Differential Capacitance ◽  
Defect Characterization ◽  
Capacitance Spectroscopy

Deep learning for defect characterization in composite laminates inspected by step-heating thermography

2021 ◽  
Vol 145 ◽  
pp. 106679
Author(s):  
Roberto Marani ◽  
Davide Palumbo ◽  
Umberto Galietti ◽  
Tiziana D'Orazio
Keyword(s):  
Deep Learning ◽  
Composite Laminates ◽  
Defect Characterization ◽  
Step Heating

Charge Pumping and Flicker Noise-based Defect Characterization in Ferroelectric FETs

2020 ◽  
Author(s):  
Yannick Raffel ◽  
Maximilian Lederer ◽  
Ricardo Olivo ◽  
Franz Muller ◽  
Raik Hoffmann ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Defect Characterization ◽  
Charge Pumping

Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures

2020 ◽  
Vol 54 (10) ◽  
pp. 1260-1266
Author(s):  
M. M. Sobolev ◽  
F. Y. Soldatenkov
Keyword(s):  
Capacitance Spectroscopy

scholarly journals Quantum Sensor for Nanoscale Defect Characterization

2021 ◽  
Vol 15 (2) ◽  
Author(s):  
J. Kerski ◽  
P. Lochner ◽  
A. Ludwig ◽  
A.D. Wieck ◽  
A. Kurzmann ◽  
...  
Keyword(s):  
Defect Characterization

Hysteresis in the MD Simulations of Differential Capacitance at the Ionic Liquid–Au Interface

2020 ◽  
Vol 11 (24) ◽  
pp. 10408-10413
Author(s):  
Iuliia V. Voroshylova ◽  
Heigo Ers ◽  
Borja Docampo-Álvarez ◽  
Piret Pikma ◽  
Vladislav B. Ivaništšev ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Md Simulations ◽  
Differential Capacitance

scholarly journals Transport Properties and High Temperature Raman Features of Heavily Gd-Doped Ceria

Energies ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 4148 ◽  
Author(s):  
Cristina Artini ◽  
Sabrina Presto ◽  
Sara Massardo ◽  
Marcella Pani ◽  
Maria Maddalena Carnasciali ◽  
...  
Keyword(s):  
Solid Oxide Fuel Cells ◽  
Oxygen Vacancies ◽  
Arrhenius Plot ◽  
Solid Oxide ◽  
Raman Shift ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
Lower Activation ◽  
Slope Change ◽  
Heavily Doped

Transport and structural properties of heavily doped ceria can reveal subtle details of the interplay between conductivity and defects aggregation in this material, widely studied as solid electrolyte in solid oxide fuel cells. The ionic conductivity of heavily Gd-doped ceria samples (Ce1−xGdxO2−x/2 with x ranging between 0.31 and 0.49) was investigated by impedance spectroscopy in the 600–1000 K temperature range. A slope change was found in the Arrhenius plot at ~723 K for samples with x = 0.31 and 0.34, namely close to the compositional boundary of the CeO2-based solid solution. The described discontinuity, giving rise to two different activation energies, points at the existence of a threshold temperature, below which oxygen vacancies are blocked, and above which they become free to move through the lattice. This conclusion is well supported by Raman spectroscopy, due to the discontinuity revealed in the Raman shift trend versus temperature of the signal related to defects aggregates which hinder the vacancies movement. This evidence, observable in samples with x = 0.31 and 0.34 above ~750 K, accounts for a weakening of Gd–O bonds within blocking microdomains, which is compatible with the existence of a lower activation energy above the threshold temperature.

Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

1998 ◽  
Vol 84 (11) ◽  
pp. 6135-6140 ◽  
Author(s):  
P. Krispin ◽  
J.-L. Lazzari ◽  
H. Kostial
Keyword(s):  
Electronic States ◽  
Capacitance Spectroscopy

Capacitance Spectroscopy of Light Induced Trap States in Organic Solar Cells

2016 ◽  
Vol 120 (39) ◽  
pp. 22169-22178 ◽  
Author(s):  
Robert A. Street ◽  
Yang Yang ◽  
Barry C. Thompson ◽  
Iain McCulloch
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Trap States ◽  
Capacitance Spectroscopy
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