Analytical Modelling and Performance Analysis of Dielectric Pocket-Induced Double-Gate Tunnel Field-Effect Transistor

IETE Technical Review ◽

10.1080/02564602.2017.1381049 ◽

2017 ◽

Vol 36 (1) ◽

pp. 17-26 ◽

Author(s):

Priyanka Saha ◽

Tripty Kumari ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Analytical Modelling ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

And Performance

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Device and circuit level performance analysis of novel InAs/Si heterojunction double gate tunnel field effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.04.008 ◽

2016 ◽

Vol 94 ◽

pp. 119-130 ◽

Author(s):

S. Ahish ◽

Dheeraj Sharma ◽

M.H. Vasantha ◽

Y.B.N. Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Level Performance

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Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.01.014 ◽

2017 ◽

Vol 103 ◽

pp. 93-101 ◽

Author(s):

S. Ahish ◽

Dheeraj Sharma ◽

M.H. Vasantha ◽

Y.B.N. Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Performance Analysis of Double Gate Heterojunction Tunnel Field Effect Transistor

2019 International Conference on Cutting-edge Technologies in Engineering (ICon-CuTE) ◽

10.1109/icon-cute47290.2019.8991467 ◽

2019 ◽

Author(s):

Irfan Ahmad Pindoo ◽

Sanjeet K. Sinha ◽

Suman Lata Tripathi

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Performance Analysis of Double Gate Junctionless Tunnel Field Effect Transistor: RF Stability Perspective

International Journal of Advanced Computer Science and Applications ◽

10.14569/ijacsa.2019.0101172 ◽

2019 ◽

Vol 10 (11) ◽

Author(s):

Veerati Raju ◽

Sivasankaran K

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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3D Modelling and Performance Analysis of Dual Material Tri-Gate Tunnel Field Effect Transistor

IETE Technical Review ◽

10.1080/02564602.2018.1428503 ◽

2018 ◽

Vol 36 (2) ◽

pp. 117-129 ◽

Author(s):

Priyanka Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

3D Modelling ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

And Performance ◽

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Performance Analysis on Effect of Variation in Oxide Material of Double Gate Tunnel Field Effect Transistor

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/1033/1/012065 ◽

2021 ◽

Vol 1033 ◽

pp. 012065

Author(s):

Rajeev Bhatia ◽

S.S. Gill

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Material ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0772-3 ◽

2015 ◽

Vol 15 (1) ◽

pp. 104-114 ◽

Author(s):

Saheli Sarkhel ◽

Navjeet Bagga ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

2D Modeling ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region

2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC) ◽

10.1109/r10-htc.2017.8288963 ◽

2017 ◽

Author(s):

Raisa Fabiha ◽

Chinmoy Nath Saha ◽

Md. Shafiqul Islam

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Subthreshold Region ◽

Effect Transistor ◽

And Performance

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Design and Performance Analysis of Tunnel Field Effect Transistor With Buried Strained Si1−x Ge x Source Structure Based Biosensor for Sensitivity Enhancement

IEEE Sensors Journal ◽

10.1109/jsen.2020.3004050 ◽

2020 ◽

Vol 20 (22) ◽

pp. 13178-13185 ◽

Author(s):

Aadil Anam ◽

Sunny Anand ◽

S. Intekhab Amin

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Sensitivity Enhancement ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

And Performance ◽

Source Structure

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Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2017.0473 ◽

2018 ◽

Vol 12 (5) ◽

pp. 557-562 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Subir K. Sarkar

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Analytical Modelling ◽

Oxide Semiconductor ◽

Effect Transistor ◽

And Performance

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