High dose implantation of Eu into α-Fe

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

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High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies

Ion Implantation in Semiconductors 1976 ◽

10.1007/978-1-4613-4196-3_7 ◽

1977 ◽

pp. 57-64

Author(s):

A. Hiraki ◽

M. Iwami ◽

K. Shuto ◽

T. Saegusa ◽

T. Narusawa ◽

...

Keyword(s):

Auger Electron ◽

High Dose ◽

High Dose Implantation

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An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.411 ◽

2017 ◽

Vol 897 ◽

pp. 411-414 ◽

Cited By ~ 4

Author(s):

Craig A. Fisher ◽

Romain Esteve ◽

Stefan Doering ◽

Michael Roesner ◽

Martin de Biasio ◽

...

Keyword(s):

High Temperature ◽

Room Temperature ◽

High Dose ◽

Stress Determination ◽

Analysis Techniques ◽

Physical Study ◽

Crystal Damage ◽

Activation Annealing ◽

Anneal Temperature ◽

High Dose Implantation

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

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Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

MRS Proceedings ◽

10.1557/proc-53-233 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 5

Author(s):

F. Namavar ◽

J. I. Budnick ◽

F. H. Sanchez ◽

H. C. Hayden

Keyword(s):

Liquid Nitrogen ◽

Current Density ◽

Room Temperature ◽

Rutherford Backscattering ◽

High Dose ◽

Crystalline Quartz ◽

Oxygen Ions ◽

High Dose Implantation ◽

A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

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Modelling of 18O tracer studies of the oxygen redistribution during formation of SiO2 layers by high dose implantation

Thin Solid Films ◽

10.1016/0040-6090(88)90265-9 ◽

1988 ◽

Vol 161 ◽

pp. 333-342 ◽

Cited By ~ 13

Author(s):

H.U. Jager ◽

J.A. Kilner ◽

R.J. Chater ◽

P.L.F. Hemment ◽

R.F. Peart ◽

...

Keyword(s):

High Dose ◽

Tracer Studies ◽

High Dose Implantation

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Wear-resistant steel surfaces obtained by high dose implantation of carbon

Materials Science and Engineering A ◽

10.1016/0921-5093(91)90610-y ◽

1991 ◽

Vol 139 ◽

pp. 150-158 ◽

Cited By ~ 12

Author(s):

C.A. Straede ◽

J.R. Poulsen ◽

B.M. Lund ◽

G. Sørensen

Keyword(s):

High Dose ◽

Resistant Steel ◽

Wear Resistant ◽

Steel Surfaces ◽

High Dose Implantation

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Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

MRS Proceedings ◽

10.1557/proc-717-c5.1 ◽

2002 ◽

Vol 717 ◽

Cited By ~ 1

Author(s):

Masashi Uematsu

Keyword(s):

Time Dependence ◽

Diffusion Model ◽

Low Dose ◽

Ostwald Ripening ◽

High Dose ◽

Enhanced Diffusion ◽

Annealing Conditions ◽

Transient Enhanced Diffusion ◽

High Dose Implantation ◽

Medium Dose

AbstractThe transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

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Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽

10.1557/s0883769400041452 ◽

1992 ◽

Vol 17 (6) ◽

pp. 40-46 ◽

Cited By ~ 16

Author(s):

G.K. Celler ◽

Alice E. White

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Integrated Circuit ◽

High Dose ◽

High Current ◽

Silicide Formation ◽

Semiconductor Substrate ◽

Beam Currents ◽

New Generation ◽

High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

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SiC Precipitate Formation During High Dose Carbon Implantation Into Silicon

MRS Proceedings ◽

10.1557/proc-439-173 ◽

1996 ◽

Vol 439 ◽

Cited By ~ 4

Author(s):

J. K. N. Lindner ◽

K. Volz ◽

B. Stritzker

Keyword(s):

Density Distribution ◽

Crystalline Silicon ◽

Ion Beam ◽

Host Lattice ◽

High Dose ◽

Carbon Ions ◽

Precipitate Formation ◽

Ion Beam Synthesis ◽

High Dose Implantation ◽

Precipitate Density

AbstractThe formation of SiC precipitates during the high-dose implantation of carbon ions into Si(100) is studied by means of TEM for implantation conditions, which are suitable for the ion beam synthesis of buried SiC layers in silicon. It is observed that in crystalline silicon nm-sized epitaxially oriented 3C-SiC precipitates are formed which are almost identical in size, nearly independent of the depth and dose (4 – 9 ×1017 C+/cm2). With increasing dose, it is mainly the density of precipitates which increases. Amorphization of the silicon host lattice leads to depth intervals with a strongly decreased density of oriented crystalline SiC precipitates. The irradiation induced formation of larger randomly oriented SiC crystallites is observed to occur in amorphized regions after prolonged implantation. Both the irradiation induced destruction and formation of SiC precipitates contribute to the generation of a nearly box-shaped precipitate density distribution at doses near the stoichiometry dose.

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