Electrostatic force gradient signal: resolution enhancement in electrostatic force microscopy and improved Kelvin probe microscopy

2003 ◽  
Vol 14 (2) ◽  
pp. 332-340 ◽  
Author(s):  
A Gil ◽  
J Colchero ◽  
J G mez-Herrero ◽  
A M Bar 
2015 ◽  
Vol 1754 ◽  
pp. 69-74
Author(s):  
Ravi Gaikwad ◽  
Tinu Abraham ◽  
Aharnish Hande ◽  
Fatemeh Bakhtiari ◽  
Siddhartha Das ◽  
...  

ABSTRACTAtomic force microscopy is employed to study the structural changes in the morphology and physical characteristics of asphaltene aggregates as a function of temperature. The exotic fractal structure obtained by evaporation-driven asphaltene aggregates shows an interesting dynamics for a large range of temperatures from 25°C to 80°C. The changes in the topography, surface potential and adhesion are unnoticeable until 70°C. However, a significant change in the dynamics and material properties is displayed in the range of 70°C - 80°C, during which the aspahltene aggregates acquire ‘liquid-like’ mobility and fuse together. This behaviour is attributed to the transition from the pure amorphous phase to a crystalline liquid phase which occurs at approximately 70°C as shown by using Differential Scanning Calorimetry (DSC). Additionally, the charged nature of asphaltenes and bitumen is also explored using kelvin probe microscopy. Such observations can lead to the development of a rational approach to the fundamental understanding of asphaltene aggregation dynamics and may help in devising novel techniques for the handling and separation of asphaltene aggregates using dielectrophoretic methods.


NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 51-54 ◽  
Author(s):  
YUKI OKIGAWA ◽  
TAKEO UMESAKA ◽  
YUTAKA OHNO ◽  
SHIGERU KISHIMOTO ◽  
TAKASHI MIZUTANI

We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.


2018 ◽  
Vol 9 ◽  
pp. 963-974 ◽  
Author(s):  
Karolline A S Araujo ◽  
Luiz A Cury ◽  
Matheus J S Matos ◽  
Thales F D Fernandes ◽  
Luiz G Cançado ◽  
...  

The influence of graphene and retinoic acid (RA) – a π-conjugated organic semiconductor – interface on their hybrid system is investigated. The physical properties of the interface are assessed via scanning probe microscopy, optical spectroscopy (photoluminescence and Raman) and ab initio calculations. The graphene/RA interaction induces the formation of a well-organized π-conjugated self-assembled monolayer (SAM) at the interface. Such structural organization leads to the high optical emission efficiency of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates surface potential changes on the hybrid system. In summary, interface-induced organized structures atop 2D materials may have an important impact on both design and operation of π-conjugated nanomaterial-based hybrid systems.


2015 ◽  
Vol 821-823 ◽  
pp. 269-272 ◽  
Author(s):  
H.R. Rossmann ◽  
Urs Gysin ◽  
Alexander Bubendorf ◽  
Thilo Glatzel ◽  
Sergey A. Reshanov ◽  
...  

Electronically active dopant profiles of epitaxially grownn-type 4H-SiC calibration layer structures with concentrations ranging from 3.1015cm-3to 1·1019cm-3have been investigated by non-contact Scanning Probe Microscopy (SPM) methods. We have shown that Kelvin Probe Force Microscopy (KPFM) and Electrostatic Force Microscopy (EFM) are capable of resolving two-dimensional carrier maps in the low doping concentration regime with nanoscale spatial resolution. Furthermore, different information depths of this wide band gap semiconductor material could be assessed due to the inherent properties of each profiling method. We additionally observed a resolution enhancement under laser illumination which we explain by reduced band-bending conditions. To gauge our SPM signals, we utilized epitaxially grown layers which were calibrated, in terms of dopant concentration, byC-Vmeasurements.


2016 ◽  
Vol 18 (33) ◽  
pp. 22772-22777 ◽  
Author(s):  
Jun Liu ◽  
Kovur Prashanthi ◽  
Zhi Li ◽  
Ryan T. McGee ◽  
Kaveh Ahadi ◽  
...  

Extraordinary electrostatic response has been found on electrospun BiFeO3nanowire loops by Kelvin probe force microscopy (KPFM) and electrostatic force microscopy (EFM).


Author(s):  
Christophe De Nardi ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
Félix Beaudoin ◽  
Jean Luc Gauffier

Abstract A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the gate proves to be the key problem, more than the probing technique itself. Applications are demonstrated on 128 kbit EEPROMs from ST Microelectronics and 64 kbit EEPROMs from Atmel.


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